RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
(2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738- Abstract
- We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2212756
- author
- Johansson, Sofia LU ; Egard, Mikael LU ; Gorji, Sepideh LU ; Borg, Mattias LU ; Berg, Martin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- High-k, InAs, MOSFET, nanowire, RF
- in
- IEEE Transactions on Microwave Theory and Techniques
- volume
- 59
- issue
- 10
- pages
- 2733 - 2738
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000295776000018
- scopus:83455203427
- ISSN
- 0018-9480
- DOI
- 10.1109/TMTT.2011.2163076
- language
- English
- LU publication?
- yes
- additional info
- Published in a Special Issue on Radio-Frequency Nanoelectronics
- id
- 2c5796a2-c950-41a8-a1e0-9a875b2aa968 (old id 2212756)
- date added to LUP
- 2016-04-01 14:13:49
- date last changed
- 2023-09-03 11:31:17
@article{2c5796a2-c950-41a8-a1e0-9a875b2aa968, abstract = {{We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.}}, author = {{Johansson, Sofia and Egard, Mikael and Gorji, Sepideh and Borg, Mattias and Berg, Martin and Wernersson, Lars-Erik and Lind, Erik}}, issn = {{0018-9480}}, keywords = {{High-k; InAs; MOSFET; nanowire; RF}}, language = {{eng}}, number = {{10}}, pages = {{2733--2738}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Transactions on Microwave Theory and Techniques}}, title = {{RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates}}, url = {{https://lup.lub.lu.se/search/files/3856620/2224526.pdf}}, doi = {{10.1109/TMTT.2011.2163076}}, volume = {{59}}, year = {{2011}}, }