Resonant tunneling permeable base transistors with high transconductance
(2004) In IEEE Electron Device Letters 25(10). p.678-680- Abstract
- A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/266422
- author
- Lind, Erik LU ; Lindström, Peter LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- resonant tunneling, gallium arsenide (GaAs), permeable base transistors, transistors, tungsten
- in
- IEEE Electron Device Letters
- volume
- 25
- issue
- 10
- pages
- 678 - 680
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000224106900004
- scopus:4744339260
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2004.835159
- language
- English
- LU publication?
- yes
- id
- 5f720f46-b677-4d95-877e-1a594867354c (old id 266422)
- date added to LUP
- 2016-04-01 16:49:29
- date last changed
- 2024-01-11 15:35:21
@article{5f720f46-b677-4d95-877e-1a594867354c, abstract = {{A GaAs-based resonant tunneling permeable base transistor has been developed and evaluated at room temperature. The transistor is fabricated by overgrowing a tungsten gate placed next to an AlGaAs-GaAs-InGaAs resonant tunneling heterostructure. By changing the gate voltage, the effective conducting area of the tunnel diode can be modulated and the collector-emitter current thus controlled. Peak currents above 300 mA/mm and a maximum transconductance of 270 mS/mm have been obtained.}}, author = {{Lind, Erik and Lindström, Peter and Wernersson, Lars-Erik}}, issn = {{0741-3106}}, keywords = {{resonant tunneling; gallium arsenide (GaAs); permeable base transistors; transistors; tungsten}}, language = {{eng}}, number = {{10}}, pages = {{678--680}}, publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}}, series = {{IEEE Electron Device Letters}}, title = {{Resonant tunneling permeable base transistors with high transconductance}}, url = {{http://dx.doi.org/10.1109/LED.2004.835159}}, doi = {{10.1109/LED.2004.835159}}, volume = {{25}}, year = {{2004}}, }