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In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator

Egard, Mikael LU ; Ärlelid, Mats LU ; Ohlsson, Lars LU orcid ; Borg, Mattias LU orcid ; Lind, Erik LU orcid and Wernersson, Lars-Erik LU (2012) In IEEE Electron Device Letters 33(7). p.970-972
Abstract
We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
generator, pulse, metal-oxide-semiconductor field-effect transistor (MOSFET), metal-organic chemical vapor deposition regrowth, Impulse radio, InGaAs, resonant tunneling diode (RTD), ultrawideband, wavelet
in
IEEE Electron Device Letters
volume
33
issue
7
pages
970 - 972
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000305835300018
  • scopus:84862850057
ISSN
0741-3106
DOI
10.1109/LED.2012.2194132
language
English
LU publication?
yes
id
6f784e32-365f-4794-88c6-fa819e7dea86 (old id 3001485)
date added to LUP
2016-04-01 14:35:55
date last changed
2024-08-01 10:18:04
@article{6f784e32-365f-4794-88c6-fa819e7dea86,
  abstract     = {{We report on the fabrication of a self-aligned regrown In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET) and a resonant tunneling diode (RTD). The performance of these devices is demonstrated by integrating them in parallel with an inductive coplanar waveguide stub to form a highly energy-efficient 70-GHz wavelet generator. The fast switching and low on-resistance of the MOSFET make it possible to kick-start and rapidly quench this RTD-driven oscillator circuit, which produces 41-ps-short wavelets at 15 Gpulses/s, a peak output power of 7 dBm, and an energy consumption of 1.9 pJ/pulse.}},
  author       = {{Egard, Mikael and Ärlelid, Mats and Ohlsson, Lars and Borg, Mattias and Lind, Erik and Wernersson, Lars-Erik}},
  issn         = {{0741-3106}},
  keywords     = {{generator; pulse; metal-oxide-semiconductor field-effect transistor (MOSFET); metal-organic chemical vapor deposition regrowth; Impulse radio; InGaAs; resonant tunneling diode (RTD); ultrawideband; wavelet}},
  language     = {{eng}},
  number       = {{7}},
  pages        = {{970--972}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Electron Device Letters}},
  title        = {{In0.53Ga0.47As RTD-MOSFET Millimeter-Wave Wavelet Generator}},
  url          = {{http://dx.doi.org/10.1109/LED.2012.2194132}},
  doi          = {{10.1109/LED.2012.2194132}},
  volume       = {{33}},
  year         = {{2012}},
}