Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates
Astromskas, Gvidas LU ; Borg, Mattias LU
and Wernersson, Lars-Erik
LU
(2012)
In Journal of Vacuum Science and Technology B
30(5).
- Abstract
- Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3191331
- author
- Astromskas, Gvidas
LU
; Borg, Mattias
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- atomic force microscopy, buffer layers, Hall effect, III-V, semiconductors, indium compounds, MOCVD, nucleation, semiconductor, epitaxial layers, semiconductor growth, vapour phase epitaxial growth, X-ray diffraction
- in
- Journal of Vacuum Science and Technology B
- volume
- 30
- issue
- 5
- article number
- 051202
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000309073500006
- scopus:84866519620
- ISSN
- 1520-8567
- DOI
- 10.1116/1.4739425
- language
- English
- LU publication?
- yes
- id
- d65e047c-88ad-47f5-9891-711419b8679a (old id 3191331)
- date added to LUP
- 2016-04-01 10:50:35
- date last changed
- 2023-08-31 12:41:21
@article{d65e047c-88ad-47f5-9891-711419b8679a,
abstract = {{Thin InAs layers and membranes are fabricated on GaAs substrates using GaSb buffer layers grown by MOVPE. The quality of the GaSb buffer layers is optimized and epitaxial InAs layers are grown on GaSb layers of various thickness. The best GaSb buffer layers are obtained for a nucleation temperature of 450 degrees C and a subsequent growth temperature of 570 degrees C with a V/III ratio of 3, as confirmed by both the structural (high-resolution XRD, AFM) and electrical (Hall) measurements. Furthermore, a clear relationship between the structural quality of the GaSb and InAs layers is established. Finally, free-standing InAs structures are fabricated where Hall measurements reveal a mobility that depends on the film thickness.}},
author = {{Astromskas, Gvidas and Borg, Mattias and Wernersson, Lars-Erik}},
issn = {{1520-8567}},
keywords = {{atomic force microscopy; buffer layers; Hall effect; III-V; semiconductors; indium compounds; MOCVD; nucleation; semiconductor; epitaxial layers; semiconductor growth; vapour phase epitaxial growth; X-ray diffraction}},
language = {{eng}},
number = {{5}},
publisher = {{American Institute of Physics (AIP)}},
series = {{Journal of Vacuum Science and Technology B}},
title = {{Thin InAs membranes and GaSb buffer layers on GaAs(001) substrates}},
url = {{https://lup.lub.lu.se/search/files/2179796/3216746.pdf}},
doi = {{10.1116/1.4739425}},
volume = {{30}},
year = {{2012}},
}