High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs
(2012) GigaHertz Symposium 2012- Abstract
- In this paper we present 15 nm InAs nanowire lateral
MOSFETs with an Ω-gate. The nanowires are grown from
size-selected Au-aerosols by means of metal-organic vapor
phase epixtaxy (MOVPE). In order to reduce the source and
drain resistances, n-type dopants were introduced in the bottom
and top parts of the nanowire forming a n-i-n structure. We
report experimental data for 15 nm InAs nanowire MOSFETs,
LG = 150 nm, with a normalized transconducatance gm =
0.7 S/mm (normalized to the circumference) and a current
density Je = 24 MA/cm, comparable to modern high electron
mobility transistors (HEMTs)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3128052
- author
- Dey, Anil LU ; Thelander, Claes LU ; Lind, Erik LU ; Borgström, Magnus LU ; Borg, Mattias LU ; Nilsson, Peter LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2012
- type
- Contribution to conference
- publication status
- published
- subject
- keywords
- high-performance, MOSFETs, InAs, drive current, transconductance
- conference name
- GigaHertz Symposium 2012
- conference location
- Frösundavik, Stockholm, Sweden
- conference dates
- 2012-03-06 - 2012-03-07
- language
- English
- LU publication?
- yes
- id
- 233f6917-2070-440f-bf45-2945af8233fe (old id 3128052)
- date added to LUP
- 2016-04-04 13:45:18
- date last changed
- 2018-11-21 23:27:28
@misc{233f6917-2070-440f-bf45-2945af8233fe, abstract = {{In this paper we present 15 nm InAs nanowire lateral<br/><br> MOSFETs with an Ω-gate. The nanowires are grown from<br/><br> size-selected Au-aerosols by means of metal-organic vapor<br/><br> phase epixtaxy (MOVPE). In order to reduce the source and<br/><br> drain resistances, n-type dopants were introduced in the bottom<br/><br> and top parts of the nanowire forming a n-i-n structure. We<br/><br> report experimental data for 15 nm InAs nanowire MOSFETs,<br/><br> LG = 150 nm, with a normalized transconducatance gm =<br/><br> 0.7 S/mm (normalized to the circumference) and a current<br/><br> density Je = 24 MA/cm, comparable to modern high electron<br/><br> mobility transistors (HEMTs)}}, author = {{Dey, Anil and Thelander, Claes and Lind, Erik and Borgström, Magnus and Borg, Mattias and Nilsson, Peter and Wernersson, Lars-Erik}}, keywords = {{high-performance; MOSFETs; InAs; drive current; transconductance}}, language = {{eng}}, title = {{High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs}}, year = {{2012}}, }