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High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs

Dey, Anil LU ; Thelander, Claes LU ; Lind, Erik LU ; Borgström, Magnus LU ; Borg, Mattias LU ; Nilsson, Peter LU and Wernersson, Lars-Erik LU (2012) GigaHertz Symposium 2012
Abstract
In this paper we present 15 nm InAs nanowire lateral

MOSFETs with an Ω-gate. The nanowires are grown from

size-selected Au-aerosols by means of metal-organic vapor

phase epixtaxy (MOVPE). In order to reduce the source and

drain resistances, n-type dopants were introduced in the bottom

and top parts of the nanowire forming a n-i-n structure. We

report experimental data for 15 nm InAs nanowire MOSFETs,

LG = 150 nm, with a normalized transconducatance gm =

0.7 S/mm (normalized to the circumference) and a current

density Je = 24 MA/cm, comparable to modern high electron

mobility transistors (HEMTs)
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author
organization
publishing date
type
Contribution to conference
publication status
published
subject
keywords
high-performance, MOSFETs, InAs, drive current, transconductance
conference name
GigaHertz Symposium 2012
language
English
LU publication?
yes
id
233f6917-2070-440f-bf45-2945af8233fe (old id 3128052)
date added to LUP
2012-10-11 17:05:01
date last changed
2016-07-08 15:28:50
@misc{233f6917-2070-440f-bf45-2945af8233fe,
  abstract     = {In this paper we present 15 nm InAs nanowire lateral<br/><br>
MOSFETs with an Ω-gate. The nanowires are grown from<br/><br>
size-selected Au-aerosols by means of metal-organic vapor<br/><br>
phase epixtaxy (MOVPE). In order to reduce the source and<br/><br>
drain resistances, n-type dopants were introduced in the bottom<br/><br>
and top parts of the nanowire forming a n-i-n structure. We<br/><br>
report experimental data for 15 nm InAs nanowire MOSFETs,<br/><br>
LG = 150 nm, with a normalized transconducatance gm =<br/><br>
0.7 S/mm (normalized to the circumference) and a current<br/><br>
density Je = 24 MA/cm, comparable to modern high electron<br/><br>
mobility transistors (HEMTs)},
  author       = {Dey, Anil and Thelander, Claes and Lind, Erik and Borgström, Magnus and Borg, Mattias and Nilsson, Peter and Wernersson, Lars-Erik},
  keyword      = {high-performance,MOSFETs,InAs,drive current,transconductance},
  language     = {eng},
  title        = {High-performance 15 nm diameter InAs nanowire Ω-gate MOSFETs},
  year         = {2012},
}