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A new understanding of au-assisted growth of III-V semiconductor nanowires

Dick Thelander, Kimberly LU ; Deppert, Knut LU orcid ; Karlsson, Lisa LU ; Wallenberg, Reine LU ; Samuelson, Lars LU and Seifert, Werner LU (2005) In Advanced Functional Materials 15(10). p.1603-1610
Abstract
Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs,... (More)
Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au. (Less)
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author
; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Advanced Functional Materials
volume
15
issue
10
pages
1603 - 1610
publisher
Wiley-Blackwell
external identifiers
  • wos:000232761500006
  • scopus:26844475917
ISSN
1616-3028
DOI
10.1002/adfm.200500157
language
English
LU publication?
yes
id
27d4aae8-2f2b-4da2-b46b-3ff35b1876f5 (old id 216739)
date added to LUP
2016-04-01 12:36:42
date last changed
2022-04-21 17:49:35
@article{27d4aae8-2f2b-4da2-b46b-3ff35b1876f5,
  abstract     = {{Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au.}},
  author       = {{Dick Thelander, Kimberly and Deppert, Knut and Karlsson, Lisa and Wallenberg, Reine and Samuelson, Lars and Seifert, Werner}},
  issn         = {{1616-3028}},
  language     = {{eng}},
  number       = {{10}},
  pages        = {{1603--1610}},
  publisher    = {{Wiley-Blackwell}},
  series       = {{Advanced Functional Materials}},
  title        = {{A new understanding of au-assisted growth of III-V semiconductor nanowires}},
  url          = {{http://dx.doi.org/10.1002/adfm.200500157}},
  doi          = {{10.1002/adfm.200500157}},
  volume       = {{15}},
  year         = {{2005}},
}