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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

Johansson, Sofia LU ; Egard, Mikael LU ; Gorji, Sepideh LU ; Borg, Mattias LU orcid ; Berg, Martin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU orcid (2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738
Abstract
We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
High-k, InAs, MOSFET, nanowire, RF
in
IEEE Transactions on Microwave Theory and Techniques
volume
59
issue
10
pages
2733 - 2738
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000295776000018
  • scopus:83455203427
ISSN
0018-9480
DOI
10.1109/TMTT.2011.2163076
language
English
LU publication?
yes
additional info
Published in a Special Issue on Radio-Frequency Nanoelectronics
id
2c5796a2-c950-41a8-a1e0-9a875b2aa968 (old id 2212756)
date added to LUP
2016-04-01 14:13:49
date last changed
2025-10-14 10:38:18
@article{2c5796a2-c950-41a8-a1e0-9a875b2aa968,
  abstract     = {{We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.}},
  author       = {{Johansson, Sofia and Egard, Mikael and Gorji, Sepideh and Borg, Mattias and Berg, Martin and Wernersson, Lars-Erik and Lind, Erik}},
  issn         = {{0018-9480}},
  keywords     = {{High-k; InAs; MOSFET; nanowire; RF}},
  language     = {{eng}},
  number       = {{10}},
  pages        = {{2733--2738}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Microwave Theory and Techniques}},
  title        = {{RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates}},
  url          = {{https://lup.lub.lu.se/search/files/3856620/2224526.pdf}},
  doi          = {{10.1109/TMTT.2011.2163076}},
  volume       = {{59}},
  year         = {{2011}},
}