Nanowire resonant tunneling diodes
(2002) In Applied Physics Letters 81(23). p.4458-4460- Abstract
- Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/322904
- author
- Björk, Mikael LU ; Ohlsson, Jonas LU ; Thelander, Claes LU ; Persson, Ann LU ; Deppert, Knut LU ; Wallenberg, Reine LU and Samuelson, Lars LU
- organization
- publishing date
- 2002
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 81
- issue
- 23
- pages
- 4458 - 4460
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000179481900049
- scopus:0037011472
- ISSN
- 0003-6951
- DOI
- 10.1063/1.1527995
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- c8867338-f5bd-42eb-8c10-fbb97b33bc6f (old id 322904)
- date added to LUP
- 2016-04-01 12:10:52
- date last changed
- 2022-04-05 18:49:51
@article{c8867338-f5bd-42eb-8c10-fbb97b33bc6f, abstract = {{Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.}}, author = {{Björk, Mikael and Ohlsson, Jonas and Thelander, Claes and Persson, Ann and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars}}, issn = {{0003-6951}}, language = {{eng}}, number = {{23}}, pages = {{4458--4460}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Nanowire resonant tunneling diodes}}, url = {{http://dx.doi.org/10.1063/1.1527995}}, doi = {{10.1063/1.1527995}}, volume = {{81}}, year = {{2002}}, }