Exposure parameters for MeV proton beam writing on SU-8
(2006) In Microelectronic Engineering 83(10). p.2015-2020- Abstract
- Proton beam writing was performed on a lithographic resist to determine the main parameters required to achieve the minimum feature size, maximum pattern lateral density and maximum aspect ratio. A 2.5 MeV proton beam focused to sizes between 1.5 and 2.5 mu m was used to expose SU-8 negative resist. The number of protons per pixel was varied in the exposure of SU-8 with thicknesses between 5 and 95 pm. Patterns consisting of single pixels, single-pixel lines and multi-pixel areas with different densities were fabricated. The smallest structures achieved were posts 1.5 pin in diameter with 4:1 structure-space ratio in 15 pm thick resist and the highest aspect ratio structures of 20:1 in 40 pm resist were produced. It was found that the... (More)
- Proton beam writing was performed on a lithographic resist to determine the main parameters required to achieve the minimum feature size, maximum pattern lateral density and maximum aspect ratio. A 2.5 MeV proton beam focused to sizes between 1.5 and 2.5 mu m was used to expose SU-8 negative resist. The number of protons per pixel was varied in the exposure of SU-8 with thicknesses between 5 and 95 pm. Patterns consisting of single pixels, single-pixel lines and multi-pixel areas with different densities were fabricated. The smallest structures achieved were posts 1.5 pin in diameter with 4:1 structure-space ratio in 15 pm thick resist and the highest aspect ratio structures of 20:1 in 40 pm resist were produced. It was found that the minimum feature size depended only on the beam size, and +/- 10% post size accuracy could be achieved within 40-70% variation of the number of protons. MeV proton beam allows a direct fabrication of complex shapes without a mask in single-step irradiation and. in addition, no proximity correction is needed. We present examples of MeV proton beam written single and multi-pixel microstructures with easily reproducible high aspect ratios and densities. (c) 2006 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/403934
- author
- Auzelyte, Vaida LU ; Elfman, Mikael LU ; Kristiansson, Per LU ; Nilsson, Christer LU ; Pallon, Jan LU ; Arteaga, Natalia LU and Wegdén, Marie LU
- organization
- publishing date
- 2006
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- lithography, microfabrication, exposure latitude, proton beam writing, pattern density, aspect ratio
- in
- Microelectronic Engineering
- volume
- 83
- issue
- 10
- pages
- 2015 - 2020
- publisher
- Elsevier
- external identifiers
-
- wos:000238919300020
- scopus:33745150043
- ISSN
- 1873-5568
- DOI
- 10.1016/j.mee.2006.04.001
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007)
- id
- 554e7862-8be9-4e63-8a37-55dc14d02342 (old id 403934)
- date added to LUP
- 2016-04-01 12:36:34
- date last changed
- 2022-01-27 07:22:59
@article{554e7862-8be9-4e63-8a37-55dc14d02342,
abstract = {{Proton beam writing was performed on a lithographic resist to determine the main parameters required to achieve the minimum feature size, maximum pattern lateral density and maximum aspect ratio. A 2.5 MeV proton beam focused to sizes between 1.5 and 2.5 mu m was used to expose SU-8 negative resist. The number of protons per pixel was varied in the exposure of SU-8 with thicknesses between 5 and 95 pm. Patterns consisting of single pixels, single-pixel lines and multi-pixel areas with different densities were fabricated. The smallest structures achieved were posts 1.5 pin in diameter with 4:1 structure-space ratio in 15 pm thick resist and the highest aspect ratio structures of 20:1 in 40 pm resist were produced. It was found that the minimum feature size depended only on the beam size, and +/- 10% post size accuracy could be achieved within 40-70% variation of the number of protons. MeV proton beam allows a direct fabrication of complex shapes without a mask in single-step irradiation and. in addition, no proximity correction is needed. We present examples of MeV proton beam written single and multi-pixel microstructures with easily reproducible high aspect ratios and densities. (c) 2006 Elsevier B.V. All rights reserved.}},
author = {{Auzelyte, Vaida and Elfman, Mikael and Kristiansson, Per and Nilsson, Christer and Pallon, Jan and Arteaga, Natalia and Wegdén, Marie}},
issn = {{1873-5568}},
keywords = {{lithography; microfabrication; exposure latitude; proton beam writing; pattern density; aspect ratio}},
language = {{eng}},
number = {{10}},
pages = {{2015--2020}},
publisher = {{Elsevier}},
series = {{Microelectronic Engineering}},
title = {{Exposure parameters for MeV proton beam writing on SU-8}},
url = {{http://dx.doi.org/10.1016/j.mee.2006.04.001}},
doi = {{10.1016/j.mee.2006.04.001}},
volume = {{83}},
year = {{2006}},
}