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Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Mo, Jiongjiong LU ; Lind, Erik LU ; Roll, Guntrade LU and Wernersson, Lars-Erik LU (2014) In Applied Physics Letters 105(3).
Abstract
Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
105
issue
3
article number
033516
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000341152300097
  • scopus:84921741935
ISSN
0003-6951
DOI
10.1063/1.4891569
language
English
LU publication?
yes
id
de08da77-89c1-4036-ba72-bcf87b9336c4 (old id 4725977)
date added to LUP
2016-04-01 09:52:44
date last changed
2023-08-30 12:06:20
@article{de08da77-89c1-4036-ba72-bcf87b9336c4,
  abstract     = {{Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.}},
  author       = {{Mo, Jiongjiong and Lind, Erik and Roll, Guntrade and Wernersson, Lars-Erik}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{3}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors}},
  url          = {{http://dx.doi.org/10.1063/1.4891569}},
  doi          = {{10.1063/1.4891569}},
  volume       = {{105}},
  year         = {{2014}},
}