Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs
(2023) In Applied Physics Letters 123(2).- Abstract
Structural defects are detrimental
to the efficiency and quality of optoelectronic semiconductor devices.
In this work, we study InGaN platelets with a quantum well structure
intended for nano-LEDs emitting red light and how their optical
properties, measured with cathodoluminescence, relate to the
corresponding atomic structure. Through a method of
spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking
mismatch boundaries intersect the quantum well in a pattern correlated
with the observed diminished cathodoluminescence intensity. The results
highlight the importance of avoiding stacking mismatch in small LED
structures due to the relatively large region of... (More)Structural defects are detrimental
(Less)
to the efficiency and quality of optoelectronic semiconductor devices.
In this work, we study InGaN platelets with a quantum well structure
intended for nano-LEDs emitting red light and how their optical
properties, measured with cathodoluminescence, relate to the
corresponding atomic structure. Through a method of
spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking
mismatch boundaries intersect the quantum well in a pattern correlated
with the observed diminished cathodoluminescence intensity. The results
highlight the importance of avoiding stacking mismatch in small LED
structures due to the relatively large region of non-radiative
recombination caused by the mismatch boundaries.
- author
- Persson, Axel R. ; Gustafsson, Anders LU ; Bi, Zhaoxia LU ; Samuelson, Lars LU ; Darakchieva, Vanya LU and Persson, Per O.Å.
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 123
- issue
- 2
- article number
- 022103
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- scopus:85165375257
- ISSN
- 0003-6951
- DOI
- 10.1063/5.0150863
- language
- English
- LU publication?
- yes
- id
- 8dd64098-f433-41b3-b0fb-57d02c85dea0
- date added to LUP
- 2023-09-05 15:23:30
- date last changed
- 2023-11-08 10:59:17
@article{8dd64098-f433-41b3-b0fb-57d02c85dea0, abstract = {{<p>Structural defects are detrimental<br> to the efficiency and quality of optoelectronic semiconductor devices. <br> In this work, we study InGaN platelets with a quantum well structure <br> intended for nano-LEDs emitting red light and how their optical <br> properties, measured with cathodoluminescence, relate to the <br> corresponding atomic structure. Through a method of <br> spectroscopy-thinning-imaging, we demonstrate in plan-view how stacking <br> mismatch boundaries intersect the quantum well in a pattern correlated <br> with the observed diminished cathodoluminescence intensity. The results <br> highlight the importance of avoiding stacking mismatch in small LED <br> structures due to the relatively large region of non-radiative <br> recombination caused by the mismatch boundaries. </p>}}, author = {{Persson, Axel R. and Gustafsson, Anders and Bi, Zhaoxia and Samuelson, Lars and Darakchieva, Vanya and Persson, Per O.Å.}}, issn = {{0003-6951}}, language = {{eng}}, number = {{2}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs}}, url = {{http://dx.doi.org/10.1063/5.0150863}}, doi = {{10.1063/5.0150863}}, volume = {{123}}, year = {{2023}}, }