Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
Menon, Heera LU ; Jeddi, Hossein LU ; Morgan, Nicholas Paul ; Fontcuberta i Morral, Anna ; Pettersson, Håkan LU and Borg, Mattias LU
(2023)
In Nanoscale Advances
5.
p.1152-1162
- Abstract
Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W−1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the... (More)
Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W−1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K.
(Less)
- author
- Menon, Heera
LU
; Jeddi, Hossein
LU
; Morgan, Nicholas Paul
; Fontcuberta i Morral, Anna
; Pettersson, Håkan
LU
and Borg, Mattias
LU
- organization
- publishing date
- 2023
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Nanoscale Advances
- volume
- 5
- pages
- 11 pages
- publisher
- Royal Society of Chemistry
- external identifiers
-
- pmid:36798495
- scopus:85147267048
- ISSN
- 2516-0230
- DOI
- 10.1039/d2na00903j
- project
- Integration of III-V semiconductor on Si by Rapid Melt Growth
- Melting into Applied inteGrated MAterials
- language
- English
- LU publication?
- yes
- additional info
- Publisher Copyright: © 2023 RSC.
- id
- a598f091-c9d3-4162-9fbd-1dd1ed7bd948
- date added to LUP
- 2023-02-16 18:15:31
- date last changed
- 2024-04-28 08:54:37
@article{a598f091-c9d3-4162-9fbd-1dd1ed7bd948,
abstract = {{<p>Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W<sup>−1</sup> at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasional twin defects and crystal lattice twist around the growth axis, in addition to residual strain, possibly causing the observation of a low-energy tail in the detector response extending the photosensitivity out to 10 μm wavelengths (0.12 eV) at 77 K.</p>}},
author = {{Menon, Heera and Jeddi, Hossein and Morgan, Nicholas Paul and Fontcuberta i Morral, Anna and Pettersson, Håkan and Borg, Mattias}},
issn = {{2516-0230}},
language = {{eng}},
pages = {{1152--1162}},
publisher = {{Royal Society of Chemistry}},
series = {{Nanoscale Advances}},
title = {{Monolithic InSb nanostructure photodetectors on Si using rapid melt growth}},
url = {{http://dx.doi.org/10.1039/d2na00903j}},
doi = {{10.1039/d2na00903j}},
volume = {{5}},
year = {{2023}},
}