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Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique

Hult, Björn ; Bergsten, Johan ; Ferrand-Drake Del Castillo, Ragnar ; Darakchieva, Vanya LU ; Malmros, Anna ; Hjelmgren, Hans ; Thorsell, Mattias and Rorsman, Niklas (2024) In IEEE Transactions on Electron Devices 71(12). p.7383-7389
Abstract

Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs). Drain-induced barrier lowering (DIBL) is commonly used for quantifying the ability of the gate to modulate the drain–source current at high drain voltages. DIBL is traditionally extracted from the relative shift of the threshold voltage at different drain–source voltages. In this article, we propose a new method based on a drain current injection technique (DCIT) to assess DIBL. This method facilitates a direct measure of the threshold voltage over a wide range of drain–source voltages in a single measurement. The method is demonstrated and compared to... (More)

Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs). Drain-induced barrier lowering (DIBL) is commonly used for quantifying the ability of the gate to modulate the drain–source current at high drain voltages. DIBL is traditionally extracted from the relative shift of the threshold voltage at different drain–source voltages. In this article, we propose a new method based on a drain current injection technique (DCIT) to assess DIBL. This method facilitates a direct measure of the threshold voltage over a wide range of drain–source voltages in a single measurement. The method is demonstrated and compared to the conventional method using AlGaN/GaN and InAlGaN HEMTs with a Fe-doped buffer and a C-doped AlGaN back-barrier, respectively. Furthermore, the impact of different gate lengths and GaN channel layer thicknesses is presented. The measurements are analyzed and discussed with supporting technology computer-aided design (TCAD) simulations. The proposed method facilitates a more general and detailed measurement of the DIBL for HEMTs.

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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Drain current injection technique (DCIT), drain-induced barrier lowering (DIBL), GaN, high electron mobility transistor (HEMT), short-channel effect (SCE)
in
IEEE Transactions on Electron Devices
volume
71
issue
12
pages
7 pages
publisher
IEEE - Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • scopus:85209913838
ISSN
0018-9383
DOI
10.1109/TED.2024.3489592
language
English
LU publication?
yes
id
b208c2c1-52d8-4e3e-aa73-644facdcdf74
date added to LUP
2025-02-17 11:27:34
date last changed
2025-06-23 12:13:48
@article{b208c2c1-52d8-4e3e-aa73-644facdcdf74,
  abstract     = {{<p>Assessing short channel effects (SCEs) is crucial in the high-frequency optimization of downscaled field-effect transistors (FETs) such as GaN high electron mobility transistors (HEMTs). Drain-induced barrier lowering (DIBL) is commonly used for quantifying the ability of the gate to modulate the drain–source current at high drain voltages. DIBL is traditionally extracted from the relative shift of the threshold voltage at different drain–source voltages. In this article, we propose a new method based on a drain current injection technique (DCIT) to assess DIBL. This method facilitates a direct measure of the threshold voltage over a wide range of drain–source voltages in a single measurement. The method is demonstrated and compared to the conventional method using AlGaN/GaN and InAlGaN HEMTs with a Fe-doped buffer and a C-doped AlGaN back-barrier, respectively. Furthermore, the impact of different gate lengths and GaN channel layer thicknesses is presented. The measurements are analyzed and discussed with supporting technology computer-aided design (TCAD) simulations. The proposed method facilitates a more general and detailed measurement of the DIBL for HEMTs.</p>}},
  author       = {{Hult, Björn and Bergsten, Johan and Ferrand-Drake Del Castillo, Ragnar and Darakchieva, Vanya and Malmros, Anna and Hjelmgren, Hans and Thorsell, Mattias and Rorsman, Niklas}},
  issn         = {{0018-9383}},
  keywords     = {{Drain current injection technique (DCIT); drain-induced barrier lowering (DIBL); GaN; high electron mobility transistor (HEMT); short-channel effect (SCE)}},
  language     = {{eng}},
  number       = {{12}},
  pages        = {{7383--7389}},
  publisher    = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
  series       = {{IEEE Transactions on Electron Devices}},
  title        = {{Characterization of Drain-Induced Barrier Lowering in GaN HEMTs Using a Drain Current Injection Technique}},
  url          = {{http://dx.doi.org/10.1109/TED.2024.3489592}},
  doi          = {{10.1109/TED.2024.3489592}},
  volume       = {{71}},
  year         = {{2024}},
}