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In Situ Studies of Atomic Layer Deposition of Hafnium Oxide on (Ag,Cu)(In,Ga)Se2 for Thin Film Solar Cells

Martin, Natalia M. LU ; Babucci, Melike ; Stolt, Lars ; Hultqvist, Adam ; Kokkonen, Esko LU orcid ; Timm, Rainer LU orcid ; Schnadt, Joachim LU orcid ; Platzer-Björkman, Charlotte and Törndahl, Tobias (2025) In ACS Applied Energy Materials 8(1). p.461-472
Abstract

Ambient pressure X-ray photoelectron spectroscopy is employed to study in real time the chemical reactions occurring on (Ag,Cu)(In,Ga)Se2 (ACIGSe) surfaces during the first atomic layer deposition (ALD) cycle of HfOx under realistic synthesis conditions by using tetrakisdimethylamido-hafnium (TDMA-Hf) and H2O precursors. We find that the initial deposition due to surface reactions of HfOx ALD on ACIGSe depends on the pretreatment of the ACIGSe surface. While the growth of HfOx occurs directly upon exposure to the metal precursor for the nontreated (i.e., as-deposited) ACIGSe surface through chemical reactions, the growth is slower for the ACIGSe surface pretreated by postdeposition... (More)

Ambient pressure X-ray photoelectron spectroscopy is employed to study in real time the chemical reactions occurring on (Ag,Cu)(In,Ga)Se2 (ACIGSe) surfaces during the first atomic layer deposition (ALD) cycle of HfOx under realistic synthesis conditions by using tetrakisdimethylamido-hafnium (TDMA-Hf) and H2O precursors. We find that the initial deposition due to surface reactions of HfOx ALD on ACIGSe depends on the pretreatment of the ACIGSe surface. While the growth of HfOx occurs directly upon exposure to the metal precursor for the nontreated (i.e., as-deposited) ACIGSe surface through chemical reactions, the growth is slower for the ACIGSe surface pretreated by postdeposition treatment by RbF. In the latter case, the diffusion of alkali and fluorine elements at the surface is observed during the ALD growth, thus leaving less reactive sites for the TDMA-Hf molecules to adsorb on. The results indicate that an optimization of the ALD of HfOx on ACIGSe needs to be taken into consideration for alkali metal fluoride-treated ACIGSe.

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author
; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
ACIGSe, ALD, alkali-PDT, AP-XPS, HfO, thin film solar cells
in
ACS Applied Energy Materials
volume
8
issue
1
pages
12 pages
publisher
The American Chemical Society (ACS)
external identifiers
  • scopus:85212780437
ISSN
2574-0962
DOI
10.1021/acsaem.4c02599
language
English
LU publication?
yes
id
e790481e-6b11-4c51-b8e2-a8936a61e91c
date added to LUP
2025-01-29 15:01:08
date last changed
2025-02-03 09:56:42
@article{e790481e-6b11-4c51-b8e2-a8936a61e91c,
  abstract     = {{<p>Ambient pressure X-ray photoelectron spectroscopy is employed to study in real time the chemical reactions occurring on (Ag,Cu)(In,Ga)Se<sub>2</sub> (ACIGSe) surfaces during the first atomic layer deposition (ALD) cycle of HfO<sub>x</sub> under realistic synthesis conditions by using tetrakisdimethylamido-hafnium (TDMA-Hf) and H<sub>2</sub>O precursors. We find that the initial deposition due to surface reactions of HfO<sub>x</sub> ALD on ACIGSe depends on the pretreatment of the ACIGSe surface. While the growth of HfO<sub>x</sub> occurs directly upon exposure to the metal precursor for the nontreated (i.e., as-deposited) ACIGSe surface through chemical reactions, the growth is slower for the ACIGSe surface pretreated by postdeposition treatment by RbF. In the latter case, the diffusion of alkali and fluorine elements at the surface is observed during the ALD growth, thus leaving less reactive sites for the TDMA-Hf molecules to adsorb on. The results indicate that an optimization of the ALD of HfO<sub>x</sub> on ACIGSe needs to be taken into consideration for alkali metal fluoride-treated ACIGSe.</p>}},
  author       = {{Martin, Natalia M. and Babucci, Melike and Stolt, Lars and Hultqvist, Adam and Kokkonen, Esko and Timm, Rainer and Schnadt, Joachim and Platzer-Björkman, Charlotte and Törndahl, Tobias}},
  issn         = {{2574-0962}},
  keywords     = {{ACIGSe; ALD; alkali-PDT; AP-XPS; HfO; thin film solar cells}},
  language     = {{eng}},
  number       = {{1}},
  pages        = {{461--472}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{ACS Applied Energy Materials}},
  title        = {{In Situ Studies of Atomic Layer Deposition of Hafnium Oxide on (Ag,Cu)(In,Ga)Se<sub>2</sub> for Thin Film Solar Cells}},
  url          = {{http://dx.doi.org/10.1021/acsaem.4c02599}},
  doi          = {{10.1021/acsaem.4c02599}},
  volume       = {{8}},
  year         = {{2025}},
}