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- 2009
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Mark
Growth of vertical InAs nanowires on heterostructured substrates
(
- Contribution to journal › Article
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Mark
Deposition of HfO2 on InAs by atomic-layer deposition
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Gated tunnel diode in oscillator applications with high frequency tuning
(
- Contribution to journal › Article
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Mark
20 GHz gated tunnel diode based UWB pulse generator
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
20 GHz Wavelet Generator Using a Gated Tunnel Diode
(
- Contribution to journal › Article
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Mark
Band Structure Effects on the Scaling Properties of [111] InAs Nanowire MOSFETs
(
- Contribution to journal › Article
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Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
60 GHz Ultra-Wideband Impulse Radio Transmitter
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
60 GHz Wavelet Generator for Impulse Radio Applications
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Design and manufacturing of a dielectric resonator antenna for impulse radio at 60 GHz
(
- Contribution to conference › Paper, not in proceeding
- 2008
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Mark
InAs film grown on Si(111) by Metalorganic Vapor Phase Epitaxy
2008) 17th International Vacuum Congress/13th International Conference on Surface Science/Internatinal Conference on Nanoscience and Technology 100. p.042017-042017(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
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Mark
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
(
- Contribution to journal › Debate/Note/Editorial
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Mark
Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
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Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article