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- 2008
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Mark
Characterization of GaSb nanowires grown by MOVPE
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Vertical enhancement-mode InAs nanowire field-effect transistor with 50-nm wrap gate
(
- Contribution to journal › Article
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Mark
Analysing the capacitance–voltage measurements of vertical wrapped-gated nanowires
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- Contribution to journal › Article
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Mark
Heterostructure Barriers in Wrap Gated Nanowire FETs
(
- Contribution to journal › Article
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Mark
Vertical InAs Nanowire Wrap Gate Transistors on Si Substrates
(
- Contribution to journal › Article
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Mark
Special Issue on Nanowire Transistors: Modeling, Device Design, and Technology
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- Contribution to journal › Debate/Note/Editorial
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Gated tunnel diode pulse generator
2008) GigaHertz Symposium In Technical report MC2 - Department of Microtechnology and Nanoscience, Chalmers University of Technology p.37-37(
- Contribution to journal › Published meeting abstract
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Mark
High-Quality InAs/InSb Nanowire Heterostructures Grown by Metal-Organic Vapor-Phase Epitaxy.
(
- Contribution to journal › Article
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Mark
Drive current and threshold voltage control in vertical InAs wrap-gate transistors
(
- Contribution to journal › Article
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Mark
GaAs/GaSb nanowire heterostructures grown by MOVPE
(
- Contribution to journal › Article