Characterization of GaSb nanowires grown by MOVPE
Borg, Mattias LU
; Dick Thelander, Kimberly
LU
; Nilsson, Henrik
LU
; Sköld, Niklas
LU
; Wagner, Jakob
LU
; Caroff, Philippe
LU
and Wernersson, Lars-Erik
LU
(2008)
14th International Conference on Metal Organic Vapor Phase Epitaxy
310(23).
p.5119-5122
- Abstract
- We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/1376211
- author
- Borg, Mattias
LU
; Dick Thelander, Kimberly
LU
; Nilsson, Henrik
LU
; Sköld, Niklas
LU
; Wagner, Jakob
LU
; Caroff, Philippe
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2008
- type
- Chapter in Book/Report/Conference proceeding
- publication status
- published
- subject
- keywords
- Gallium, Metalorganic vapor phase epitaxy, compounds, Antimonides, Nanowires
- host publication
- Journal of Chrystal Growth
- volume
- 310
- issue
- 23
- pages
- 5119 - 5122
- publisher
- Elsevier
- conference name
- 14th International Conference on Metal Organic Vapor Phase Epitaxy
- conference dates
- 2008-06-01 - 2008-06-06
- external identifiers
-
- wos:000262019400099
- scopus:56249141773
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2008.07.061
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- ae32300d-3368-4ebb-8070-ae883b39d5ac (old id 1376211)
- date added to LUP
- 2016-04-01 14:35:15
- date last changed
- 2025-10-14 09:25:26
@inproceedings{ae32300d-3368-4ebb-8070-ae883b39d5ac,
abstract = {{We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.}},
author = {{Borg, Mattias and Dick Thelander, Kimberly and Nilsson, Henrik and Sköld, Niklas and Wagner, Jakob and Caroff, Philippe and Wernersson, Lars-Erik}},
booktitle = {{Journal of Chrystal Growth}},
issn = {{0022-0248}},
keywords = {{Gallium; Metalorganic vapor phase epitaxy; compounds; Antimonides; Nanowires}},
language = {{eng}},
number = {{23}},
pages = {{5119--5122}},
publisher = {{Elsevier}},
title = {{Characterization of GaSb nanowires grown by MOVPE}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2008.07.061}},
doi = {{10.1016/j.jcrysgro.2008.07.061}},
volume = {{310}},
year = {{2008}},
}