NanoLund: Centre for Nanoscience
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- 2014
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Mark
InAs nanowire MOSFET differential active mixer on Si-substrate
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- Contribution to journal › Article
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High Transconductance, f(t) and f(max) in In0.63Ga0.37As FinFETs Using A Novel Fin Formation Technique
2014) 26th International Conference on Indium Phosphide and Related Materials (IPRM)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Calibration of an elastic recoil setup for D/H-ratios close to natural abundance
2014) In Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms 332. p.187-190(
- Contribution to journal › Article
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Mark
Material Dependence of Water Interactions with Metal Oxide Nanoparticles: TiO2, SiO2, GeO2, and SnO2
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- Contribution to journal › Scientific review
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Mark
Orientation specific deposition of mesoporous particles
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- Contribution to journal › Article
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Atomic-Scale Variability and Control of III-V Nanowire Growth Kinetics
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- Contribution to journal › Article
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Mark
RF and DC Analysis of Stressed InGaAs MOSFETs
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- Contribution to specialist publication or newspaper › Specialist publication article
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Mark
In0.63Ga0.37As FinFETs Using Selectively Regrown Nanowires with Peak Transconductance of 2.85 mS/mu m at V-ds-0.5 V
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Properties of bilateral spinocerebellar activation of cerebellar cortical neurons.
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- Contribution to journal › Article
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Parity independence of the zero-bias conductance peak in a nanowire based topological superconductor-quantum dot hybrid device.
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- Contribution to journal › Article