Ivan Maximov
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- 2003
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Mark
Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- Contribution to journal › Article
-
Mark
Fluorescence microscopy for quality control in nanoimprint lithography
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
The influence of confining wall profile on quantum interference effects in etched Ga0.25In0.75As/InP billiards
- Contribution to journal › Article
-
Mark
Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems.
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
- 2002
-
Mark
High frequency characterization of a GaInAs/InP electronic waveguide T-branch switch
- Contribution to journal › Article
-
Mark
Polymer stamps for nanoimprinting
- Contribution to journal › Article
-
Mark
Improving stamps for 10 nm level wafer scale nanoimprint lithography
- Contribution to journal › Article
-
Mark
Investigation of polymethylmethacrylate resist residues using photoelectron microscopy
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
Nanoimprint lithography for fabrication of three-terminal ballistic junctions in InP/GaInAs
- Contribution to journal › Article
-
Mark
Nanoimprint in mr-L 6000.1 XP/PMMA resist system
(2002) Proceedings of 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science (NANO-7/ECOSS-21)
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
