Reine Wallenberg
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- 2006
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Mark
On the crystallography of III (Ga, In) - V (P, As) nanowires
2006) Joint Meet of German and Polish Assoc for Crystal Growth, Berlin, Germany (2006)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Fabrication and electron transport study of three-terminal InAs nanowire junctions
2006) 14th Intl Symp “Nanostructures: Physics and Technology”, 2006(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Self-assembling 1D–3D nanowire devices
2006) DVG Tagung, Dortmund, Germany, 2006 (INVITED)(
- Contribution to conference › Paper, not in proceeding
-
Mark
Epitaxial growth of III-V nanowires on silicon substrates
2006) 13th Intl Conf on MOVPE, Miyazaki, Japan (2006)(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Electrical properties of three-terminal InAs nanowire junctions
2006) ICPS 2006, Vienna, Austria, July 24-28 2006 1(
- Contribution to conference › Paper, not in proceeding
- 2005
-
Mark
XEDS-mapping for explaining release patterns from single pellets
(
- Contribution to journal › Article
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Mark
Epitaxially grown GaP/GaAs1-xPx/GaP double heterostructure nanowires for optical applications
(
- Contribution to journal › Article
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Mark
Selective catalytic oxidation of ammonia to nitrogen at low temperature on Pt/CuO/Al2O3
(
- Contribution to journal › Article
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Mark
A new understanding of au-assisted growth of III-V semiconductor nanowires
(
- Contribution to journal › Article
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Mark
Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructures
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding