Bahram Ganjipour (Former)
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- 2011
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Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
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Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
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Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
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Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
- 2010
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Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
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Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding