GaSb nanowire single-hole transistor
(2011) In Applied Physics Letters 99(26).- Abstract
- We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2344946
- author
- Ganjipour, Bahram LU ; Nilsson, Henrik LU ; Borg, Mattias LU ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU ; Xu, Hongqi LU and Thelander, Claes LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 99
- issue
- 26
- article number
- 262104
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000298638500034
- scopus:84862937192
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3673328
- language
- English
- LU publication?
- yes
- id
- 267813cd-b96f-4481-b4fa-2b4b87d59d07 (old id 2344946)
- date added to LUP
- 2016-04-01 10:59:34
- date last changed
- 2022-01-26 04:31:22
@article{267813cd-b96f-4481-b4fa-2b4b87d59d07, abstract = {{We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]}}, author = {{Ganjipour, Bahram and Nilsson, Henrik and Borg, Mattias and Wernersson, Lars-Erik and Samuelson, Lars and Xu, Hongqi and Thelander, Claes}}, issn = {{0003-6951}}, language = {{eng}}, number = {{26}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{GaSb nanowire single-hole transistor}}, url = {{http://dx.doi.org/10.1063/1.3673328}}, doi = {{10.1063/1.3673328}}, volume = {{99}}, year = {{2011}}, }