Bahram Ganjipour (Former)
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- 2017
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Mark
Radial tunnel diodes based on InP/InGaAs core-shell nanowires
(
- Contribution to journal › Article
- 2015
-
Mark
Transport studies of electron-hole and spin-orbit interaction in GaSb/InAsSb core-shell nanowire quantum dots
(
- Contribution to journal › Article
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Mark
Characterization of Ambipolar GaSb/InAs Core-Shell Nanowires by Thermovoltage Measurements.
(
- Contribution to journal › Article
- 2014
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Mark
InP/InGaAs core/shell nanowire tunnel diodes for radial tunnel field effect transistor and multi-junction solar cell applications
(
- Contribution to journal › Published meeting abstract
-
Mark
Electrical properties of GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
-
Mark
Quantum Transport in Heterostructure Nanowire Devices
2014)(
- Thesis › Doctoral thesis (compilation)
- 2013
-
Mark
High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
(
- Contribution to journal › Article
- 2012
-
Mark
High Current Density InAsSb/GaSb Tunnel Field Effect Transistors
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Demonstration of Defect-Free and Composition Tunable Ga(x)In(1-x)Sb Nanowires.
(
- Contribution to journal › Article
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Mark
Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices
(
- Contribution to journal › Article
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Mark
Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
(
- Contribution to journal › Article
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Mark
Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
(
- Contribution to journal › Article
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Mark
Current Modulation in GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
2012) ICPS 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of n- and p-doped GaSb-InAsSb Nanowire Interband Tunnel Diodes
2012) MRS Fall Meeting, 2012(
- Contribution to conference › Abstract
-
Mark
Electrical Properties of Top-gate GaSb/InAs Core/Shell Nanowire Field Effect Transistor
2012) ICPS 2012(
- Contribution to conference › Abstract
- 2011
-
Mark
High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires
(
- Contribution to journal › Article
-
Mark
GaSb nanowire single-hole transistor
(
- Contribution to journal › Article
-
Mark
Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
(
- Contribution to journal › Article
-
Mark
Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(
- Contribution to journal › Article
- 2010
-
Mark
InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors.
(
- Contribution to journal › Article
-
Mark
InAs/GaSb heterostructure nanowires for tunnel FETs
2010) 15th international conference on metal organic vapor phase epitaxy, 2010(
- Contribution to conference › Paper, not in proceeding