High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors
Dey, Anil LU ; Borg, Mattias LU
; Ganjipour, Bahram
LU
; Ek, Martin
LU
; Dick Thelander, Kimberly
LU
; Lind, Erik
LU
; Thelander, Claes
LU
and Wernersson, Lars-Erik
LU
(2013)
In IEEE Electron Device Letters
34(2).
p.211-213
- Abstract
- We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/3410609
- author
- Dey, Anil
LU
; Borg, Mattias
LU
; Ganjipour, Bahram
LU
; Ek, Martin
LU
; Dick Thelander, Kimberly
LU
; Lind, Erik
LU
; Thelander, Claes
LU
and Wernersson, Lars-Erik
LU
- organization
- publishing date
- 2013
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Broken gap, GaSb, III–V, InAs, tunnel field-effect transistors (TFETs)
- in
- IEEE Electron Device Letters
- volume
- 34
- issue
- 2
- pages
- 211 - 213
- publisher
- IEEE - Institute of Electrical and Electronics Engineers Inc.
- external identifiers
-
- wos:000314173200021
- scopus:84873058119
- ISSN
- 0741-3106
- DOI
- 10.1109/LED.2012.2234078
- language
- English
- LU publication?
- yes
- id
- 642aa123-6702-4f8e-b7d5-67a9538695da (old id 3410609)
- date added to LUP
- 2016-04-01 14:17:48
- date last changed
- 2023-11-13 05:37:08
@article{642aa123-6702-4f8e-b7d5-67a9538695da,
abstract = {{We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.}},
author = {{Dey, Anil and Borg, Mattias and Ganjipour, Bahram and Ek, Martin and Dick Thelander, Kimberly and Lind, Erik and Thelander, Claes and Wernersson, Lars-Erik}},
issn = {{0741-3106}},
keywords = {{Broken gap; GaSb; III–V; InAs; tunnel field-effect transistors (TFETs)}},
language = {{eng}},
number = {{2}},
pages = {{211--213}},
publisher = {{IEEE - Institute of Electrical and Electronics Engineers Inc.}},
series = {{IEEE Electron Device Letters}},
title = {{High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors}},
url = {{https://lup.lub.lu.se/search/files/3895693/3410610.pdf}},
doi = {{10.1109/LED.2012.2234078}},
volume = {{34}},
year = {{2013}},
}