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High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

Dey, Anil LU ; Borg, Mattias LU ; Ganjipour, Bahram LU ; Ek, Martin LU ; Dick Thelander, Kimberly LU ; Lind, Erik LU ; Thelander, Claes LU and Wernersson, Lars-Erik LU (2013) In IEEE Electron Device Letters 34(2). p.211-213
Abstract
We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Broken gap, GaSb, III–V, InAs, tunnel field-effect transistors (TFETs)
in
IEEE Electron Device Letters
volume
34
issue
2
pages
211 - 213
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000314173200021
  • scopus:84873058119
ISSN
0741-3106
DOI
10.1109/LED.2012.2234078
language
English
LU publication?
yes
id
642aa123-6702-4f8e-b7d5-67a9538695da (old id 3410609)
date added to LUP
2013-01-28 13:21:01
date last changed
2019-04-23 02:36:20
@article{642aa123-6702-4f8e-b7d5-67a9538695da,
  abstract     = {We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.},
  author       = {Dey, Anil and Borg, Mattias and Ganjipour, Bahram and Ek, Martin and Dick Thelander, Kimberly and Lind, Erik and Thelander, Claes and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {Broken gap,GaSb,III–V,InAs,tunnel field-effect transistors (TFETs)},
  language     = {eng},
  number       = {2},
  pages        = {211--213},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors},
  url          = {http://dx.doi.org/10.1109/LED.2012.2234078},
  volume       = {34},
  year         = {2013},
}