Lennart Lindström (Former)
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- 2003
-
Mark
Vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
-
Mark
Spectroscopic observation of the TDD0 in silicon
(
- Contribution to journal › Article
-
Mark
Stable hydrogen pair trapped at carbon impurities in silicon
(
- Contribution to journal › Article
-
Mark
The VO2* defect in silicon
(
- Contribution to journal › Article
-
Mark
Defect reactions associated with divacancy elimination in silicon
(
- Contribution to journal › Article
-
Mark
Interaction between localized and extended modes of oxygen in silicon
(
- Contribution to journal › Article
-
Mark
Effect of high hydrostatic pressure on small oxygen-related clusters in silicon: LVM studies
(
- Contribution to journal › Article
- 2002
-
Mark
Electronic properties of vacancy-oxygen complex in Ge crystals
(
- Contribution to journal › Article
-
Mark
Carbon-oxygen-related complexes in irradiated and heat-treated silicon: IR absorption studies
(
- Contribution to journal › Article
-
Mark
Ligand hyperfine interaction at the neutral silicon vacancy in 4H- and 6H-SiC
(
- Contribution to journal › Article