Magnus Borgström
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- 2011
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Mark
Growth of doped InAsyP1-y nanowires with InP shells
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- Contribution to journal › Article
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Gate-Induced Fermi Level Tuning in InP Nanowires at Efficiency Close to the Thermal Limit.
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- Contribution to journal › Article
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Dynamics of extremely anisotropic etching of InP nanowires by HCl
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- Contribution to journal › Article
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A New Route toward Semiconductor Nanospintronics: Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
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- Contribution to journal › Article
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Mark
Doping profile of InP nanowires directly imaged by photoemission electron microscopy
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- Contribution to journal › Article
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Degenerate p-doping of InP nanowires for large area tunnel diodes
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- Contribution to journal › Article
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Unit cell parameters of wurtzite InP nanowires determined by x-ray diffraction
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- Contribution to journal › Article
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InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
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- Contribution to journal › Article
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Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
2011) EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials 88(4). p.444-447(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
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Mark
Dual-gate induced InP nanowire diode
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- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding