Magnus Borgström
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- 2011
-
Mark
InAs quantum dots and quantum wells grown on stacking-fault controlled InP nanowires with wurtzite crystal structure
(
- Contribution to journal › Article
-
Mark
Electron Image Series Reconstruction of Twin Interfaces in InP Superlattice Nanowires.
(
- Contribution to journal › Article
-
Mark
15 nm diameter InAs nanowire MOSFETs
(
- Chapter in Book/Report/Conference proceeding › Paper in conference proceeding
-
Mark
A new route towards semiconductor nanospintronics: highly Mn - doped GaAs nanowires realized by ion - implantation under dynamic annealing conditions.
2011) MRS Fall Meeting, 2011(
- Contribution to conference › Paper, not in proceeding
-
Mark
Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.
(
- Contribution to journal › Article
- 2010
-
Mark
High-Performance Single Nanowire Tunnel Diodes.
(
- Contribution to journal › Article
-
Mark
Changes in Contact Angle of Seed Particle Correlated with Increased Zincblende Formation in Doped InP Nanowires.
(
- Contribution to journal › Article
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Mark
In Situ Etching for Total Control Over Axial and Radial Nanowire Growth
(
- Contribution to journal › Article
-
Mark
Doping Incorporation in InAs nanowires characterized by capacitance measurements
(
- Contribution to journal › Article
-
Mark
The electrical and structural properties of n-type InAs nanowires grown from metal-organic precursors.
(
- Contribution to journal › Article