Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study
Mandl, Bernhard LU ; Dey, Anil LU ; Stangl, Julian ; Cantoro, Mirco ; Wernersson, Lars-Erik LU ; Bauer, Günther ; Samuelson, Lars LU ; Deppert, Knut LU
and Thelander, Claes
LU
(2011)
In Journal of Crystal Growth
334(1).
p.51-56
- Abstract
- In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into... (More)
- In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2158617
- author
- Mandl, Bernhard
LU
; Dey, Anil
LU
; Stangl, Julian
; Cantoro, Mirco
; Wernersson, Lars-Erik
LU
; Bauer, Günther
; Samuelson, Lars
LU
; Deppert, Knut
LU
and Thelander, Claes
LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Nanostructures, Nanowire growth, Metalorganic vapor phase epitaxy, Semiconductor III–V materials
- in
- Journal of Crystal Growth
- volume
- 334
- issue
- 1
- pages
- 6 pages
- publisher
- Elsevier
- external identifiers
-
- wos:000296269000007
- scopus:80053308317
- pmid:22053114
- ISSN
- 0022-0248
- DOI
- 10.1016/j.jcrysgro.2011.08.023
- language
- English
- LU publication?
- yes
- id
- 0b8c9258-3599-4371-b107-b0b65ba51f6f (old id 2158617)
- date added to LUP
- 2016-04-01 14:33:27
- date last changed
- 2023-11-13 09:14:01
@article{0b8c9258-3599-4371-b107-b0b65ba51f6f,
abstract = {{In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.}},
author = {{Mandl, Bernhard and Dey, Anil and Stangl, Julian and Cantoro, Mirco and Wernersson, Lars-Erik and Bauer, Günther and Samuelson, Lars and Deppert, Knut and Thelander, Claes}},
issn = {{0022-0248}},
keywords = {{Nanostructures; Nanowire growth; Metalorganic vapor phase epitaxy; Semiconductor III–V materials}},
language = {{eng}},
number = {{1}},
pages = {{51--56}},
publisher = {{Elsevier}},
series = {{Journal of Crystal Growth}},
title = {{Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study}},
url = {{http://dx.doi.org/10.1016/j.jcrysgro.2011.08.023}},
doi = {{10.1016/j.jcrysgro.2011.08.023}},
volume = {{334}},
year = {{2011}},
}