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GaAs/GaSb nanowire heterostructures grown by MOVPE

Borg, Mattias LU ; Dick Thelander, Kimberly LU ; Wagner, Jakob LU ; Caroff, Philippe LU ; Deppert, Knut LU ; Samuelson, Lars LU and Wernersson, Lars-Erik LU (2008) In Journal of Crystal Growth 310(18). p.4115-4121
Abstract
We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb... (More)
We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb or AuGa2-GaSb pseudo-binaries of the Au-Ga-Sb ternary phase diagram. Finally, the GaSb nanowires exhibit untapered radial growth on the {1 (1) over bar 0} side facets. (C) 2008 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
gallium antimonide, antimonides, metal-organic vapor phase epitaxy, nanowires, heterostructures
in
Journal of Crystal Growth
volume
310
issue
18
pages
4115 - 4121
publisher
Elsevier
external identifiers
  • wos:000259791100016
  • scopus:49749084693
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2008.06.066
language
English
LU publication?
yes
id
d2795187-8b0f-43f5-85c1-0997dbe9b54f (old id 1285740)
date added to LUP
2009-02-06 09:13:58
date last changed
2017-11-05 03:52:39
@article{d2795187-8b0f-43f5-85c1-0997dbe9b54f,
  abstract     = {We report Au-assisted growth of GaAs/GaSb nanowire heterostructures on GaAs(1 1 1)B-substrates by metal-organic vapor phase epitaxy. The growth is studied at various precursor molar fractions and temperatures, in order to optimize the growth conditions for the GaSb nanowire segment. In contrast to most other III-V nanowire systems, the GaSb nanowire growth is Group V-limited under most conditions. We found that depending on the TMSb molar fraction, the seed particle is either supersaturated AuGa or AuGa2 during GaSb growth. The high Ga content in the particle gives a characteristic diameter increase between the GaAs and GaSb segment. From TEM and XEDS measurements we conclude that the GaSb nanowire growth occurs along either the AuGa-GaSb or AuGa2-GaSb pseudo-binaries of the Au-Ga-Sb ternary phase diagram. Finally, the GaSb nanowires exhibit untapered radial growth on the {1 (1) over bar 0} side facets. (C) 2008 Elsevier B.V. All rights reserved.},
  author       = {Borg, Mattias and Dick Thelander, Kimberly and Wagner, Jakob and Caroff, Philippe and Deppert, Knut and Samuelson, Lars and Wernersson, Lars-Erik},
  issn         = {0022-0248},
  keyword      = {gallium antimonide,antimonides,metal-organic vapor phase epitaxy,nanowires,heterostructures},
  language     = {eng},
  number       = {18},
  pages        = {4115--4121},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {GaAs/GaSb nanowire heterostructures grown by MOVPE},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2008.06.066},
  volume       = {310},
  year         = {2008},
}