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Characterization of GaSb nanowires grown by MOVPE

Borg, Mattias LU orcid ; Dick Thelander, Kimberly LU ; Nilsson, Henrik LU ; Sköld, Niklas LU ; Wagner, Jakob LU ; Caroff, Philippe LU and Wernersson, Lars-Erik LU (2008) 14th International Conference on Metal Organic Vapor Phase Epitaxy 310(23). p.5119-5122
Abstract
We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Gallium, Metalorganic vapor phase epitaxy, compounds, Antimonides, Nanowires
host publication
Journal of Chrystal Growth
volume
310
issue
23
pages
5119 - 5122
publisher
Elsevier
conference name
14th International Conference on Metal Organic Vapor Phase Epitaxy
conference dates
2008-06-01 - 2008-06-06
external identifiers
  • wos:000262019400099
  • scopus:56249141773
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2008.07.061
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
id
ae32300d-3368-4ebb-8070-ae883b39d5ac (old id 1376211)
date added to LUP
2016-04-01 14:35:15
date last changed
2022-03-29 21:46:45
@inproceedings{ae32300d-3368-4ebb-8070-ae883b39d5ac,
  abstract     = {{We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.}},
  author       = {{Borg, Mattias and Dick Thelander, Kimberly and Nilsson, Henrik and Sköld, Niklas and Wagner, Jakob and Caroff, Philippe and Wernersson, Lars-Erik}},
  booktitle    = {{Journal of Chrystal Growth}},
  issn         = {{0022-0248}},
  keywords     = {{Gallium; Metalorganic vapor phase epitaxy; compounds; Antimonides; Nanowires}},
  language     = {{eng}},
  number       = {{23}},
  pages        = {{5119--5122}},
  publisher    = {{Elsevier}},
  title        = {{Characterization of GaSb nanowires grown by MOVPE}},
  url          = {{http://dx.doi.org/10.1016/j.jcrysgro.2008.07.061}},
  doi          = {{10.1016/j.jcrysgro.2008.07.061}},
  volume       = {{310}},
  year         = {{2008}},
}