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Characterization of GaSb nanowires grown by MOVPE

Borg, Mattias LU ; Dick Thelander, Kimberly LU ; Nilsson, Henrik LU ; Sköld, Niklas LU ; Wagner, Jakob LU ; Caroff, Philippe LU and Wernersson, Lars-Erik LU (2008) 14th International Conference on Metal Organic Vapor Phase Epitaxy In Journal of Chrystal Growth 310(23). p.5119-5122
Abstract
We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Chapter in Book/Report/Conference proceeding
publication status
published
subject
keywords
Gallium, Metalorganic vapor phase epitaxy, compounds, Antimonides, Nanowires
in
Journal of Chrystal Growth
volume
310
issue
23
pages
5119 - 5122
publisher
Elsevier
conference name
14th International Conference on Metal Organic Vapor Phase Epitaxy
external identifiers
  • wos:000262019400099
  • scopus:56249141773
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2008.07.061
language
English
LU publication?
yes
id
ae32300d-3368-4ebb-8070-ae883b39d5ac (old id 1376211)
date added to LUP
2009-04-17 08:13:35
date last changed
2017-07-30 04:18:30
@inproceedings{ae32300d-3368-4ebb-8070-ae883b39d5ac,
  abstract     = {We report the growth and characterization of GaSb nanowires grown by MOVPE. The structural properties of the nanowires are investigated by the means of transmission electron microscopy, X-ray diffraction and single nanowire photoluminescence. The measurements confirm a high material quality in the GaSb nanowires. Also, a back-gated nanowire transistor structure is used to extract values for the polarity and resistivity of the GaSb. Finally, a simple kinetic model is presented to explain the non-linear time dependence of the GaSb nanowire growth. (C) 2008 Elsevier B.V. All rights reserved.},
  author       = {Borg, Mattias and Dick Thelander, Kimberly and Nilsson, Henrik and Sköld, Niklas and Wagner, Jakob and Caroff, Philippe and Wernersson, Lars-Erik},
  booktitle    = {Journal of Chrystal Growth},
  issn         = {0022-0248},
  keyword      = {Gallium,Metalorganic vapor phase epitaxy,compounds,Antimonides,Nanowires},
  language     = {eng},
  number       = {23},
  pages        = {5119--5122},
  publisher    = {Elsevier},
  title        = {Characterization of GaSb nanowires grown by MOVPE},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2008.07.061},
  volume       = {310},
  year         = {2008},
}