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Semiconductor nanowires for 0D and 1D physics and applications

Samuelson, Lars LU ; Thelander, Claes LU ; Björk, Mikael LU ; Borgström, Magnus LU ; Deppert, Knut LU ; Dick Thelander, Kimberly LU ; Hansen, Adam LU ; Mårtensson, Thomas LU ; Panev, Nikolay LU and Persson, Ann LU , et al. (2004) In Physica E: Low-Dimensional Systems and Nanostructures 25(2-3). p.313-318
Abstract
During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.
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subject
keywords
Nanowires, Quantum confinement, Single-electron tunneling 68.65.−k, 78.67.Lt, 73.63.−b, 73.23.Hk, Heterostructures
in
Physica E: Low-Dimensional Systems and Nanostructures
volume
25
issue
2-3
pages
313 - 318
publisher
Elsevier
external identifiers
  • wos:000225282500023
  • scopus:9644283361
ISSN
1386-9477
DOI
10.1016/j.physe.2004.06.030
language
English
LU publication?
yes
id
9e7ee5f3-d364-428e-9c83-83d48ae0e4dd (old id 140822)
date added to LUP
2007-07-13 15:58:43
date last changed
2017-10-01 04:40:12
@article{9e7ee5f3-d364-428e-9c83-83d48ae0e4dd,
  abstract     = {During the last 5 years the potential for applications of semiconductor nanowires has grown rapidly via the development of methods for catalytically induced nanowire growth using the, so-called vapor-liquid-solid (VLS) growth mode. The VLS method offers a high degree of control of parameters such as position, diameter, length and composition, including the realization of atomically abrupt heterostructure interfaces inside a nanowire. In this review, we summarize the progress and the standing of our research from the point of view of controlled growth, structural and electronic properties and in terms of different families of devices which have been possible to realize. (C) 2004 Elsevier B.V. All rights reserved.},
  author       = {Samuelson, Lars and Thelander, Claes and Björk, Mikael and Borgström, Magnus and Deppert, Knut and Dick Thelander, Kimberly and Hansen, Adam and Mårtensson, Thomas and Panev, Nikolay and Persson, Ann and Seifert, Werner and Sköld, Niklas and Larsson, Magnus and Wallenberg, Reine},
  issn         = {1386-9477},
  keyword      = {Nanowires,Quantum confinement,Single-electron tunneling

68.65.−k,78.67.Lt,73.63.−b,73.23.Hk,Heterostructures},
  language     = {eng},
  number       = {2-3},
  pages        = {313--318},
  publisher    = {Elsevier},
  series       = {Physica E: Low-Dimensional Systems and Nanostructures},
  title        = {Semiconductor nanowires for 0D and 1D physics and applications},
  url          = {http://dx.doi.org/10.1016/j.physe.2004.06.030},
  volume       = {25},
  year         = {2004},
}