Semiconductor nanowires for novel one-dimensional devices
Samuelson, Lars LU ; Björk, Mikael LU ; Deppert, Knut LU
; Larsson, Magnus
LU
; Ohlsson, Jonas
LU
; Panev, Nikolay
LU
; Persson, Ann
LU
; Sköld, Niklas
LU
; Thelander, Claes
LU
and Wallenberg, Reine
LU
(2004)
In Physica E: Low-Dimensional Systems and Nanostructures
21(2-4).
p.560-567
- Abstract
- Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control... (More)
- Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/140908
- author
- Samuelson, Lars
LU
; Björk, Mikael
LU
; Deppert, Knut
LU
; Larsson, Magnus
LU
; Ohlsson, Jonas
LU
; Panev, Nikolay
LU
; Persson, Ann
LU
; Sköld, Niklas
LU
; Thelander, Claes
LU
and Wallenberg, Reine
LU
- organization
- publishing date
- 2004
- type
- Contribution to journal
- publication status
- published
- subject
- keywords
- Resonant tunneling, Nanowire, Quantum dot, Heterostructure, Coulomb blockade
- in
- Physica E: Low-Dimensional Systems and Nanostructures
- volume
- 21
- issue
- 2-4
- pages
- 560 - 567
- publisher
- Elsevier
- external identifiers
-
- wos:000220873300086
- scopus:12144291710
- ISSN
- 1386-9477
- DOI
- 10.1016/j.physe.2003.11.072
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Polymer and Materials Chemistry (LTH) (011001041)
- id
- 96c47e8c-e3c5-4e1e-bea6-a513c2f14035 (old id 140908)
- date added to LUP
- 2016-04-01 16:40:15
- date last changed
- 2022-01-28 21:17:43
@article{96c47e8c-e3c5-4e1e-bea6-a513c2f14035,
abstract = {{Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved.}},
author = {{Samuelson, Lars and Björk, Mikael and Deppert, Knut and Larsson, Magnus and Ohlsson, Jonas and Panev, Nikolay and Persson, Ann and Sköld, Niklas and Thelander, Claes and Wallenberg, Reine}},
issn = {{1386-9477}},
keywords = {{Resonant tunneling; Nanowire; Quantum dot; Heterostructure; Coulomb blockade}},
language = {{eng}},
number = {{2-4}},
pages = {{560--567}},
publisher = {{Elsevier}},
series = {{Physica E: Low-Dimensional Systems and Nanostructures}},
title = {{Semiconductor nanowires for novel one-dimensional devices}},
url = {{http://dx.doi.org/10.1016/j.physe.2003.11.072}},
doi = {{10.1016/j.physe.2003.11.072}},
volume = {{21}},
year = {{2004}},
}