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Semiconductor nanowires for novel one-dimensional devices

Samuelson, Lars LU ; Björk, Mikael LU ; Deppert, Knut LU ; Larsson, Magnus LU ; Ohlsson, Jonas LU ; Panev, Nikolay LU ; Persson, Ann LU ; Sköld, Niklas LU ; Thelander, Claes LU and Wallenberg, Reine LU (2004) In Physica E: Low-Dimensional Systems and Nanostructures 21(2-4). p.560-567
Abstract
Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control... (More)
Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Resonant tunneling, Nanowire, Quantum dot, Heterostructure, Coulomb blockade
in
Physica E: Low-Dimensional Systems and Nanostructures
volume
21
issue
2-4
pages
560 - 567
publisher
Elsevier
external identifiers
  • wos:000220873300086
  • scopus:12144291710
ISSN
1386-9477
DOI
10.1016/j.physe.2003.11.072
language
English
LU publication?
yes
id
96c47e8c-e3c5-4e1e-bea6-a513c2f14035 (old id 140908)
date added to LUP
2007-07-13 16:04:24
date last changed
2017-10-29 04:20:17
@article{96c47e8c-e3c5-4e1e-bea6-a513c2f14035,
  abstract     = {Low-dimensional semiconductors offer interesting physical phenomena but also the possibility to realize novel types of devices based on, for instance, ID structures. By using traditional top-down fabrication methods the performance of devices is often limited by the quality of the processed device structures. In many cases damage makes ultra-small devices unusable. In this work we present a recently developed method for bottom-up fabrication of epitaxially nucleated semiconductor nanowires based on metallic nanoparticle-induced formation of self-assembled nanowires. Further development of the vapor-liquid-solid growth method have made it possible to control not only the dimension and position of nanowires but also to control heterostructures formed inside the nanowires. Based on these techniques we have realized a series of transport devices such as resonant tunneling and single-electron transistors but also optically active single quantum dots positioned inside nanowires displaying sharp emission characteristics due to excitons. (C) 2003 Elsevier B.V. All rights reserved.},
  author       = {Samuelson, Lars and Björk, Mikael and Deppert, Knut and Larsson, Magnus and Ohlsson, Jonas and Panev, Nikolay and Persson, Ann and Sköld, Niklas and Thelander, Claes and Wallenberg, Reine},
  issn         = {1386-9477},
  keyword      = {Resonant tunneling,Nanowire,Quantum dot,Heterostructure,Coulomb blockade},
  language     = {eng},
  number       = {2-4},
  pages        = {560--567},
  publisher    = {Elsevier},
  series       = {Physica E: Low-Dimensional Systems and Nanostructures},
  title        = {Semiconductor nanowires for novel one-dimensional devices},
  url          = {http://dx.doi.org/10.1016/j.physe.2003.11.072},
  volume       = {21},
  year         = {2004},
}