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Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.

Egard, Mikael LU ; Johansson, Sofia LU ; Johansson, Anne-Charlotte; Persson, Karl-Magnus LU ; Dey, Anil LU ; Borg, Mattias LU ; Thelander, Claes LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2010) In Nano Letters 10(3). p.809-812
Abstract
In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is... (More)
In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
10
issue
3
pages
809 - 812
publisher
The American Chemical Society
external identifiers
  • pmid:20131812
  • wos:000275278200011
  • scopus:77949445771
ISSN
1530-6992
DOI
10.1021/nl903125m
language
English
LU publication?
yes
id
7f3444de-afe1-4696-8bda-32d501c1a48a (old id 1552950)
alternative location
http://www.ncbi.nlm.nih.gov/pubmed/20131812?dopt=Abstract
date added to LUP
2010-03-18 12:28:21
date last changed
2018-05-29 11:21:21
@article{7f3444de-afe1-4696-8bda-32d501c1a48a,
  abstract     = {In this letter we report on high-frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximum frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.},
  author       = {Egard, Mikael and Johansson, Sofia and Johansson, Anne-Charlotte and Persson, Karl-Magnus and Dey, Anil and Borg, Mattias and Thelander, Claes and Wernersson, Lars-Erik and Lind, Erik},
  issn         = {1530-6992},
  language     = {eng},
  number       = {3},
  pages        = {809--812},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {Vertical InAs nanowire wrap gate transistors with f(t) > 7 GHz and f(max) > 20 GHz.},
  url          = {http://dx.doi.org/10.1021/nl903125m},
  volume       = {10},
  year         = {2010},
}