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Low-frequency noise in vertical InAs nanowire FETs

Persson, Karl-Magnus LU ; Lind, Erik LU ; Dey, Anil LU ; Thelander, Claes LU ; Sjöland, Henrik LU and Wernersson, Lars-Erik LU (2010) In IEEE Electron Device Letters 31(5). p.428-430
Abstract
This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
nanowire (NW), InAs, FET, flicker noise
in
IEEE Electron Device Letters
volume
31
issue
5
pages
428 - 430
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000277047300016
  • scopus:77951877916
ISSN
0741-3106
DOI
10.1109/LED.2010.2043637
language
English
LU publication?
yes
id
e83993c9-5475-4778-89bf-e86b34eaeec2 (old id 1601805)
alternative location
http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5437236
date added to LUP
2010-05-20 09:44:35
date last changed
2018-05-29 11:29:30
@article{e83993c9-5475-4778-89bf-e86b34eaeec2,
  abstract     = {This letter presents dc characteristics and low-frequency noise (LFN) measurements on single vertical InAs nanowire MOSFETs with 35-nm gate length and HfO2 high-kappa dielectric. The average normalized transconductance for three devices is 0.16 S/mm, with a subthreshold slope of 130 mV/decade. At 10 Hz, the normalized noise power S-I/I-d(2) measures 7.3 x 10(-7) Hz(-1). Moreover, the material-dependent Hooge's parameter at room temperature is estimated to be 4.2 x 10(-3).},
  author       = {Persson, Karl-Magnus and Lind, Erik and Dey, Anil and Thelander, Claes and Sjöland, Henrik and Wernersson, Lars-Erik},
  issn         = {0741-3106},
  keyword      = {nanowire (NW),InAs,FET,flicker noise},
  language     = {eng},
  number       = {5},
  pages        = {428--430},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {Low-frequency noise in vertical InAs nanowire FETs},
  url          = {http://dx.doi.org/10.1109/LED.2010.2043637},
  volume       = {31},
  year         = {2010},
}