Skip to main content

Lund University Publications

LUND UNIVERSITY LIBRARIES

Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.

Wallentin, Jesper LU ; Mergenthaler, Kilian LU ; Ek, Martin LU orcid ; Wallenberg, Reine LU ; Samuelson, Lars LU ; Deppert, Knut LU orcid ; Pistol, Mats-Erik LU and Borgström, Magnus LU orcid (2011) In Nano Letters 11(Online May 23, 2011). p.2286-2290
Abstract
We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
11
issue
Online May 23, 2011
pages
2286 - 2290
publisher
The American Chemical Society (ACS)
external identifiers
  • wos:000291322600016
  • pmid:21604708
  • scopus:79958830533
  • pmid:21604708
ISSN
1530-6992
DOI
10.1021/nl200492g
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
1538bdaa-e7b4-489c-9ef1-275e9c90db7b (old id 1972240)
date added to LUP
2016-04-01 13:43:23
date last changed
2024-11-22 10:33:35
@article{1538bdaa-e7b4-489c-9ef1-275e9c90db7b,
  abstract     = {{We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal structure, in contrast to bulk InP which has the zinc blende structure. The nanowires display photoluminescence which is strongly blue shifted compared with the band gap, well into the visible range. We find evidence of a second conduction band minimum at the gamma point about 0.23 eV above the band edge, in excellent agreement with recent theoretical predictions. Electrical measurements show high conductivity and breakdown currents of 10(7) A/cm(2).}},
  author       = {{Wallentin, Jesper and Mergenthaler, Kilian and Ek, Martin and Wallenberg, Reine and Samuelson, Lars and Deppert, Knut and Pistol, Mats-Erik and Borgström, Magnus}},
  issn         = {{1530-6992}},
  language     = {{eng}},
  number       = {{Online May 23, 2011}},
  pages        = {{2286--2290}},
  publisher    = {{The American Chemical Society (ACS)}},
  series       = {{Nano Letters}},
  title        = {{Probing the Wurtzite Conduction Band Structure Using State Filling in Highly Doped InP Nanowires.}},
  url          = {{http://dx.doi.org/10.1021/nl200492g}},
  doi          = {{10.1021/nl200492g}},
  volume       = {{11}},
  year         = {{2011}},
}