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Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study

Mandl, Bernhard LU ; Dey, Anil LU ; Stangl, Julian; Cantoro, Mirco; Wernersson, Lars-Erik LU ; Bauer, Günther; Samuelson, Lars LU ; Deppert, Knut LU and Thelander, Claes LU (2011) In Journal of Crystal Growth 334(1). p.51-56
Abstract
In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into... (More)
In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Nanostructures, Nanowire growth, Metalorganic vapor phase epitaxy, Semiconductor III–V materials
in
Journal of Crystal Growth
volume
334
issue
1
pages
51 - 56
publisher
Elsevier
external identifiers
  • wos:000296269000007
  • scopus:80053308317
ISSN
0022-0248
DOI
10.1016/j.jcrysgro.2011.08.023
language
English
LU publication?
yes
id
0b8c9258-3599-4371-b107-b0b65ba51f6f (old id 2158617)
date added to LUP
2011-09-19 11:22:12
date last changed
2017-10-22 04:21:30
@article{0b8c9258-3599-4371-b107-b0b65ba51f6f,
  abstract     = {In this work, the nucleation and growth of InAs nanowires on patterned SiO2/Si(111) substrates is studied. It is found that the nanowire yield is strongly dependent on the size of the etched holes in the SiO2, where openings smaller than 180 nm lead to a substantial decrease in nucleation yield, while openings larger than View the MathML source promote nucleation of crystallites rather than nanowires. We propose that this is a result of indium particle formation prior to nanowire growth, where the size of the indium particles, under constant growth parameters, is strongly influenced by the size of the openings in the SiO2 film. Nanowires overgrowing the etched holes, eventually leading to a merging of neighboring nanowires, shed light into the growth mechanism.},
  author       = {Mandl, Bernhard and Dey, Anil and Stangl, Julian and Cantoro, Mirco and Wernersson, Lars-Erik and Bauer, Günther and Samuelson, Lars and Deppert, Knut and Thelander, Claes},
  issn         = {0022-0248},
  keyword      = {Nanostructures,Nanowire growth,Metalorganic vapor phase epitaxy,Semiconductor III–V materials},
  language     = {eng},
  number       = {1},
  pages        = {51--56},
  publisher    = {Elsevier},
  series       = {Journal of Crystal Growth},
  title        = {Self-seeded, position-controlled InAs nanowire growth on Si: A growth parameter study},
  url          = {http://dx.doi.org/10.1016/j.jcrysgro.2011.08.023},
  volume       = {334},
  year         = {2011},
}