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High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires

Ganjipour, Bahram LU ; Dey, Anil LU ; Borg, Mattias LU ; Ek, Martin LU ; Pistol, Mats-Erik LU ; Dick Thelander, Kimberly LU ; Wernersson, Lars-Erik LU and Thelander, Claes LU (2011) In Nano Letters 11(10). p.4222-4226
Abstract
We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Nano Letters
volume
11
issue
10
pages
4222 - 4226
publisher
The American Chemical Society
external identifiers
  • wos:000295667000033
  • pmid:21894940
  • scopus:80054012791
ISSN
1530-6992
DOI
10.1021/nl202180b
language
English
LU publication?
yes
id
80a27a66-ed85-495f-a32d-c30316237827 (old id 2158622)
date added to LUP
2011-09-19 13:52:18
date last changed
2017-10-29 03:52:38
@article{80a27a66-ed85-495f-a32d-c30316237827,
  abstract     = {We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm2 at 0.50 V, maximum peak current of 67 kA/cm2 at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.},
  author       = {Ganjipour, Bahram and Dey, Anil and Borg, Mattias and Ek, Martin and Pistol, Mats-Erik and Dick Thelander, Kimberly and Wernersson, Lars-Erik and Thelander, Claes},
  issn         = {1530-6992},
  language     = {eng},
  number       = {10},
  pages        = {4222--4226},
  publisher    = {The American Chemical Society},
  series       = {Nano Letters},
  title        = {High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires},
  url          = {http://dx.doi.org/10.1021/nl202180b},
  volume       = {11},
  year         = {2011},
}