Advanced

Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality

Ek, Martin LU ; Borg, Mattias LU ; Dey, Anil LU ; Ganjipour, Bahram LU ; Thelander, Claes LU ; Wernersson, Lars-Erik LU and Dick Thelander, Kimberly LU (2011) In Crystal Growth & Design 11(10). p.4588-4593
Abstract
Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background contamination. In this paper we demonstrate growth of GaSb/InAs(Sb) nanowire heterostructures with potential applications in tunneling devices, and study the processes occurring during the transition from GaSb to InAs growth. We show how the heterostructure can be grown with a sharp transition by taking advantage of a growth stop, which occurs... (More)
Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background contamination. In this paper we demonstrate growth of GaSb/InAs(Sb) nanowire heterostructures with potential applications in tunneling devices, and study the processes occurring during the transition from GaSb to InAs growth. We show how the heterostructure can be grown with a sharp transition by taking advantage of a growth stop, which occurs naturally as the Au seed particle is emptied of Ga and filled with In. The remaining Sb background in the reactor during the InAs growth results in a finite Sb incorporation into this segment. This has the advantage of suppressing stacking faults in the InAs(Sb) segment, making the entire heterostructure a single zincblende crystal. (Less)
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Crystal Growth & Design
volume
11
issue
10
pages
4588 - 4593
publisher
The American Chemical Society
external identifiers
  • wos:000295488200051
  • scopus:80053555253
ISSN
1528-7483
DOI
10.1021/cg200829q
language
English
LU publication?
yes
id
a1e1b3dd-0ac7-474d-8362-bc6377a3e7bc (old id 2158670)
date added to LUP
2011-10-24 14:35:54
date last changed
2017-04-09 04:28:13
@article{a1e1b3dd-0ac7-474d-8362-bc6377a3e7bc,
  abstract     = {Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background contamination. In this paper we demonstrate growth of GaSb/InAs(Sb) nanowire heterostructures with potential applications in tunneling devices, and study the processes occurring during the transition from GaSb to InAs growth. We show how the heterostructure can be grown with a sharp transition by taking advantage of a growth stop, which occurs naturally as the Au seed particle is emptied of Ga and filled with In. The remaining Sb background in the reactor during the InAs growth results in a finite Sb incorporation into this segment. This has the advantage of suppressing stacking faults in the InAs(Sb) segment, making the entire heterostructure a single zincblende crystal.},
  author       = {Ek, Martin and Borg, Mattias and Dey, Anil and Ganjipour, Bahram and Thelander, Claes and Wernersson, Lars-Erik and Dick Thelander, Kimberly},
  issn         = {1528-7483},
  language     = {eng},
  number       = {10},
  pages        = {4588--4593},
  publisher    = {The American Chemical Society},
  series       = {Crystal Growth & Design},
  title        = {Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality},
  url          = {http://dx.doi.org/10.1021/cg200829q},
  volume       = {11},
  year         = {2011},
}