Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality
(2011) In Crystal Growth & Design 11(10). p.4588-4593- Abstract
- Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background contamination. In this paper we demonstrate growth of GaSb/InAs(Sb) nanowire heterostructures with potential applications in tunneling devices, and study the processes occurring during the transition from GaSb to InAs growth. We show how the heterostructure can be grown with a sharp transition by taking advantage of a growth stop, which occurs... (More)
- Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background contamination. In this paper we demonstrate growth of GaSb/InAs(Sb) nanowire heterostructures with potential applications in tunneling devices, and study the processes occurring during the transition from GaSb to InAs growth. We show how the heterostructure can be grown with a sharp transition by taking advantage of a growth stop, which occurs naturally as the Au seed particle is emptied of Ga and filled with In. The remaining Sb background in the reactor during the InAs growth results in a finite Sb incorporation into this segment. This has the advantage of suppressing stacking faults in the InAs(Sb) segment, making the entire heterostructure a single zincblende crystal. (Less)
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2158670
- author
- Ek, Martin LU ; Borg, Mattias LU ; Dey, Anil LU ; Ganjipour, Bahram LU ; Thelander, Claes LU ; Wernersson, Lars-Erik LU and Dick Thelander, Kimberly LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Crystal Growth & Design
- volume
- 11
- issue
- 10
- pages
- 6 pages
- publisher
- The American Chemical Society (ACS)
- external identifiers
-
- wos:000295488200051
- scopus:80053555253
- ISSN
- 1528-7483
- DOI
- 10.1021/cg200829q
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Solid State Physics (011013006), Electrical and information technology (011041010), Polymer and Materials Chemistry (LTH) (011001041)
- id
- a1e1b3dd-0ac7-474d-8362-bc6377a3e7bc (old id 2158670)
- date added to LUP
- 2016-04-04 07:16:09
- date last changed
- 2023-09-05 11:27:56
@article{a1e1b3dd-0ac7-474d-8362-bc6377a3e7bc, abstract = {{Switching of the group-III element in III-V nanowire heterostructures is difficult due to the high solubility of group-III atoms in the Au seed particle. In addition, switching from Sb to a different group-V element has not been achieved in binary materials, largely due to its high solubility in Au. In MOVPE growth the use of Sb precursors presents further complications due to reactor background contamination. In this paper we demonstrate growth of GaSb/InAs(Sb) nanowire heterostructures with potential applications in tunneling devices, and study the processes occurring during the transition from GaSb to InAs growth. We show how the heterostructure can be grown with a sharp transition by taking advantage of a growth stop, which occurs naturally as the Au seed particle is emptied of Ga and filled with In. The remaining Sb background in the reactor during the InAs growth results in a finite Sb incorporation into this segment. This has the advantage of suppressing stacking faults in the InAs(Sb) segment, making the entire heterostructure a single zincblende crystal.}}, author = {{Ek, Martin and Borg, Mattias and Dey, Anil and Ganjipour, Bahram and Thelander, Claes and Wernersson, Lars-Erik and Dick Thelander, Kimberly}}, issn = {{1528-7483}}, language = {{eng}}, number = {{10}}, pages = {{4588--4593}}, publisher = {{The American Chemical Society (ACS)}}, series = {{Crystal Growth & Design}}, title = {{Formation of the axial heterojunction in GaSb/InAs(Sb) nanowires with high crystal quality}}, url = {{http://dx.doi.org/10.1021/cg200829q}}, doi = {{10.1021/cg200829q}}, volume = {{11}}, year = {{2011}}, }