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A new understanding of au-assisted growth of III-V semiconductor nanowires

Dick Thelander, Kimberly LU ; Deppert, Knut LU ; Karlsson, Lisa LU ; Wallenberg, Reine LU ; Samuelson, Lars LU and Seifert, Werner LU (2005) In Advanced Functional Materials 15(10). p.1603-1610
Abstract
Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs,... (More)
Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Advanced Functional Materials
volume
15
issue
10
pages
1603 - 1610
publisher
Wiley-VCH
external identifiers
  • wos:000232761500006
  • scopus:26844475917
ISSN
1616-3028
DOI
10.1002/adfm.200500157
language
English
LU publication?
yes
id
27d4aae8-2f2b-4da2-b46b-3ff35b1876f5 (old id 216739)
date added to LUP
2007-08-02 14:54:52
date last changed
2017-11-19 03:40:11
@article{27d4aae8-2f2b-4da2-b46b-3ff35b1876f5,
  abstract     = {Semiconductor nanowires of III-V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so-called vapor-liquid-solid (VLS) mechanism has often been proposed for III-V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that An is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III-V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid-phase solution or compound containing An and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature-dependent interaction with Au.},
  author       = {Dick Thelander, Kimberly and Deppert, Knut and Karlsson, Lisa and Wallenberg, Reine and Samuelson, Lars and Seifert, Werner},
  issn         = {1616-3028},
  language     = {eng},
  number       = {10},
  pages        = {1603--1610},
  publisher    = {Wiley-VCH },
  series       = {Advanced Functional Materials},
  title        = {A new understanding of au-assisted growth of III-V semiconductor nanowires},
  url          = {http://dx.doi.org/10.1002/adfm.200500157},
  volume       = {15},
  year         = {2005},
}