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RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates

Johansson, Sofia LU ; Egard, Mikael LU ; Gorji, Sepideh LU ; Borg, Mattias LU ; Berg, Martin LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2011) In IEEE Transactions on Microwave Theory and Techniques 59(10). p.2733-2738
Abstract
We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
High-k, InAs, MOSFET, nanowire, RF
in
IEEE Transactions on Microwave Theory and Techniques
volume
59
issue
10
pages
2733 - 2738
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000295776000018
  • scopus:83455203427
ISSN
0018-9480
DOI
10.1109/TMTT.2011.2163076
language
English
LU publication?
yes
id
2c5796a2-c950-41a8-a1e0-9a875b2aa968 (old id 2212756)
date added to LUP
2011-11-23 13:44:31
date last changed
2017-01-01 06:08:03
@article{2c5796a2-c950-41a8-a1e0-9a875b2aa968,
  abstract     = {We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.},
  author       = {Johansson, Sofia and Egard, Mikael and Gorji, Sepideh and Borg, Mattias and Berg, Martin and Wernersson, Lars-Erik and Lind, Erik},
  issn         = {0018-9480},
  keyword      = {High-k,InAs,MOSFET,nanowire,RF},
  language     = {eng},
  number       = {10},
  pages        = {2733--2738},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Transactions on Microwave Theory and Techniques},
  title        = {RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates},
  url          = {http://dx.doi.org/10.1109/TMTT.2011.2163076},
  volume       = {59},
  year         = {2011},
}