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Interface composition of InAs nanowires with Al2O2 and HfO2 thin films

Timm, Rainer LU ; Hjort, Martin LU ; Fian, Alexander; Borg, Mattias LU ; Thelander, Claes LU ; Andersen, Jesper N LU ; Wernersson, Lars-Erik LU and Mikkelsen, Anders LU (2011) In Applied Physics Letters 99(22). p.1-222907
Abstract (Swedish)
Abstract in Undetermined

Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
high-k dielectric thin films, alumina, hafnium compounds, indium, compounds, interface phenomena, nanostructured materials, nanowires, semiconductor materials
in
Applied Physics Letters
volume
99
issue
22
pages
1 - 222907
publisher
American Institute of Physics
external identifiers
  • wos:000298244500062
  • scopus:82955194686
ISSN
0003-6951
DOI
10.1063/1.3664399
language
English
LU publication?
yes
id
ab04035b-d526-49c3-8bbd-5105128d5ccb (old id 2255861)
date added to LUP
2012-02-06 13:35:05
date last changed
2017-07-02 03:15:49
@article{ab04035b-d526-49c3-8bbd-5105128d5ccb,
  abstract     = {<b>Abstract in Undetermined</b><br/><br>
Vertical InAs nanowires (NWs) wrapped by a thin high-kappa dielectric layer may be a key to the next generation of high-speed metal-oxide-semiconductor devices. Here, we have investigated the structure and chemical composition of the interface between InAs NWs and 2 nm thick Al(2)O(3) and HfO(2) films. The native oxide on the NWs is significantly reduced upon high-kappa deposition, although less effective than for corresponding planar samples, resulting in a 0.8 nm thick interface layer with an In-/As-oxide composition of about 0.7/0.3. The exact oxide reduction and composition including As-suboxides and the role of the NW geometry are discussed in detail.},
  author       = {Timm, Rainer and Hjort, Martin and Fian, Alexander and Borg, Mattias and Thelander, Claes and Andersen, Jesper N and Wernersson, Lars-Erik and Mikkelsen, Anders},
  issn         = {0003-6951},
  keyword      = {high-k dielectric thin films,alumina,hafnium compounds,indium,compounds,interface phenomena,nanostructured materials,nanowires,semiconductor materials},
  language     = {eng},
  number       = {22},
  pages        = {1--222907},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Interface composition of InAs nanowires with Al2O2 and HfO2 thin films},
  url          = {http://dx.doi.org/10.1063/1.3664399},
  volume       = {99},
  year         = {2011},
}