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GaSb nanowire single-hole transistor

Ganjipour, Bahram LU ; Nilsson, Henrik LU ; Borg, Mattias LU ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU ; Xu, Hongqi LU and Thelander, Claes LU (2011) In Applied Physics Letters 99(26).
Abstract
We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
26
publisher
American Institute of Physics
external identifiers
  • wos:000298638500034
  • scopus:84862937192
ISSN
0003-6951
DOI
10.1063/1.3673328
language
English
LU publication?
yes
id
267813cd-b96f-4481-b4fa-2b4b87d59d07 (old id 2344946)
date added to LUP
2012-02-24 14:07:20
date last changed
2017-07-30 03:25:18
@article{267813cd-b96f-4481-b4fa-2b4b87d59d07,
  abstract     = {We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]},
  articleno    = {262104},
  author       = {Ganjipour, Bahram and Nilsson, Henrik and Borg, Mattias and Wernersson, Lars-Erik and Samuelson, Lars and Xu, Hongqi and Thelander, Claes},
  issn         = {0003-6951},
  language     = {eng},
  number       = {26},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {GaSb nanowire single-hole transistor},
  url          = {http://dx.doi.org/10.1063/1.3673328},
  volume       = {99},
  year         = {2011},
}