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GaSb nanowire single-hole transistor

Ganjipour, Bahram LU ; Nilsson, Henrik LU ; Borg, Mattias LU ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU ; Xu, Hongqi LU and Thelander, Claes LU (2011) In Applied Physics Letters 99(26).
Abstract
We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]
Please use this url to cite or link to this publication:
author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
26
article number
262104
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000298638500034
  • scopus:84862937192
ISSN
0003-6951
DOI
10.1063/1.3673328
language
English
LU publication?
yes
id
267813cd-b96f-4481-b4fa-2b4b87d59d07 (old id 2344946)
date added to LUP
2016-04-01 10:59:34
date last changed
2021-08-25 05:26:58
@article{267813cd-b96f-4481-b4fa-2b4b87d59d07,
  abstract     = {We present an experimental study of single hole transistors (SHTs) made from p-type GaSb nanowires. Closely spaced source-drain electrodes are fabricated onto GaSb nanowires to define a SHT within a GaSb nanowire. Room temperature back-gate transfer characteristics show typical hole transport behavior. The fabricated devices are characterized by transport measurements at 1.5 K, where periodic conductance oscillations due to Coulomb blockade are observed and a charging energy of 5 meV is determined. (C) 2011 American Institute of Physics. [doi:10.1063/1.3673328]},
  author       = {Ganjipour, Bahram and Nilsson, Henrik and Borg, Mattias and Wernersson, Lars-Erik and Samuelson, Lars and Xu, Hongqi and Thelander, Claes},
  issn         = {0003-6951},
  language     = {eng},
  number       = {26},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {GaSb nanowire single-hole transistor},
  url          = {http://dx.doi.org/10.1063/1.3673328},
  doi          = {10.1063/1.3673328},
  volume       = {99},
  year         = {2011},
}