Degenerate p-doping of InP nanowires for large area tunnel diodes
(2011) In Applied Physics Letters 99(25).- Abstract
- We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2345037
- author
- Wallentin, Jesper LU ; Wickert, Peter ; Ek, Martin LU ; Gustafsson, Anders LU ; Wallenberg, Reine LU ; Magnusson, Martin LU ; Samuelson, Lars LU ; Deppert, Knut LU and Borgström, Magnus LU
- organization
- publishing date
- 2011
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 99
- issue
- 25
- article number
- 253105
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000299031600054
- scopus:84555218403
- ISSN
- 0003-6951
- DOI
- 10.1063/1.3669697
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 63d9ecfb-2f62-4505-bc16-f11120aa3efb (old id 2345037)
- date added to LUP
- 2016-04-01 11:00:39
- date last changed
- 2023-11-10 10:45:51
@article{63d9ecfb-2f62-4505-bc16-f11120aa3efb, abstract = {{We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]}}, author = {{Wallentin, Jesper and Wickert, Peter and Ek, Martin and Gustafsson, Anders and Wallenberg, Reine and Magnusson, Martin and Samuelson, Lars and Deppert, Knut and Borgström, Magnus}}, issn = {{0003-6951}}, language = {{eng}}, number = {{25}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Degenerate p-doping of InP nanowires for large area tunnel diodes}}, url = {{http://dx.doi.org/10.1063/1.3669697}}, doi = {{10.1063/1.3669697}}, volume = {{99}}, year = {{2011}}, }