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Degenerate p-doping of InP nanowires for large area tunnel diodes

Wallentin, Jesper LU ; Wickert, Peter ; Ek, Martin LU orcid ; Gustafsson, Anders LU ; Wallenberg, Reine LU ; Magnusson, Martin LU ; Samuelson, Lars LU ; Deppert, Knut LU orcid and Borgström, Magnus LU (2011) In Applied Physics Letters 99(25).
Abstract
We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]
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author
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
99
issue
25
article number
253105
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000299031600054
  • scopus:84555218403
ISSN
0003-6951
DOI
10.1063/1.3669697
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
63d9ecfb-2f62-4505-bc16-f11120aa3efb (old id 2345037)
date added to LUP
2016-04-01 11:00:39
date last changed
2020-12-01 03:50:10
@article{63d9ecfb-2f62-4505-bc16-f11120aa3efb,
  abstract     = {We have investigated p-doping of InP nanowires using diethyl zinc. Two-terminal devices showed non-linear source-drain characteristics and p-type gate dependence. Electron beam induced current measurements were employed to determine minority carrier diffusion lengths. We used large-area tunnel diodes to demonstrate degenerate doping, showing peak current densities of up to 0.11 A/cm(2) and room temperature peak to valley current ratios of 5.3. These results demonstrate that high p- and n-doping, paired with sharp doping profiles, can be achieved in InP nanowires. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669697]},
  author       = {Wallentin, Jesper and Wickert, Peter and Ek, Martin and Gustafsson, Anders and Wallenberg, Reine and Magnusson, Martin and Samuelson, Lars and Deppert, Knut and Borgström, Magnus},
  issn         = {0003-6951},
  language     = {eng},
  number       = {25},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Degenerate p-doping of InP nanowires for large area tunnel diodes},
  url          = {http://dx.doi.org/10.1063/1.3669697},
  doi          = {10.1063/1.3669697},
  volume       = {99},
  year         = {2011},
}