Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point
(2012) In Applied Physics Letters 100(25).- Abstract
- Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/2873563
- author
- organization
- publishing date
- 2012
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 100
- issue
- 25
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000305676400003
- scopus:84863317960
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4729929
- language
- English
- LU publication?
- yes
- additional info
- The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
- id
- 7c768555-44e1-45dd-acfd-3bde57760047 (old id 2873563)
- date added to LUP
- 2016-04-01 10:53:14
- date last changed
- 2023-10-12 16:48:14
@article{7c768555-44e1-45dd-acfd-3bde57760047, abstract = {{Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]}}, author = {{Wallentin, Jesper and Poncela, Laura Barrutia and Jansson, Anna M. and Mergenthaler, Kilian and Ek, Martin and Jacobsson, Daniel and Wallenberg, Reine and Deppert, Knut and Samuelson, Lars and Hessman, Dan and Borgström, Magnus}}, issn = {{0003-6951}}, language = {{eng}}, number = {{25}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point}}, url = {{https://lup.lub.lu.se/search/files/2209074/2968586.pdf}}, doi = {{10.1063/1.4729929}}, volume = {{100}}, year = {{2012}}, }