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Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin, Jesper LU ; Poncela, Laura Barrutia; Jansson, Anna M.; Mergenthaler, Kilian LU ; Ek, Martin LU ; Jacobsson, Daniel LU ; Wallenberg, Reine LU ; Deppert, Knut LU ; Samuelson, Lars LU and Hessman, Dan LU , et al. (2012) In Applied Physics Letters 100(25).
Abstract
Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]
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Applied Physics Letters
volume
100
issue
25
publisher
American Institute of Physics
external identifiers
  • wos:000305676400003
  • scopus:84863317960
ISSN
0003-6951
DOI
10.1063/1.4729929
language
English
LU publication?
yes
id
7c768555-44e1-45dd-acfd-3bde57760047 (old id 2873563)
date added to LUP
2012-07-24 15:44:16
date last changed
2017-07-30 03:23:29
@article{7c768555-44e1-45dd-acfd-3bde57760047,
  abstract     = {Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]},
  author       = {Wallentin, Jesper and Poncela, Laura Barrutia and Jansson, Anna M. and Mergenthaler, Kilian and Ek, Martin and Jacobsson, Daniel and Wallenberg, Reine and Deppert, Knut and Samuelson, Lars and Hessman, Dan and Borgström, Magnus},
  issn         = {0003-6951},
  language     = {eng},
  number       = {25},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point},
  url          = {http://dx.doi.org/10.1063/1.4729929},
  volume       = {100},
  year         = {2012},
}