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Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin, Jesper LU ; Poncela, Laura Barrutia ; Jansson, Anna M. ; Mergenthaler, Kilian LU ; Ek, Martin LU orcid ; Jacobsson, Daniel LU ; Wallenberg, Reine LU ; Deppert, Knut LU orcid ; Samuelson, Lars LU and Hessman, Dan LU , et al. (2012) In Applied Physics Letters 100(25).
Abstract
Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]
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organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
100
issue
25
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000305676400003
  • scopus:84863317960
ISSN
0003-6951
DOI
10.1063/1.4729929
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Polymer and Materials Chemistry (LTH) (011001041), Solid State Physics (011013006)
id
7c768555-44e1-45dd-acfd-3bde57760047 (old id 2873563)
date added to LUP
2016-04-01 10:53:14
date last changed
2023-10-12 16:48:14
@article{7c768555-44e1-45dd-acfd-3bde57760047,
  abstract     = {{Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4729929]}},
  author       = {{Wallentin, Jesper and Poncela, Laura Barrutia and Jansson, Anna M. and Mergenthaler, Kilian and Ek, Martin and Jacobsson, Daniel and Wallenberg, Reine and Deppert, Knut and Samuelson, Lars and Hessman, Dan and Borgström, Magnus}},
  issn         = {{0003-6951}},
  language     = {{eng}},
  number       = {{25}},
  publisher    = {{American Institute of Physics (AIP)}},
  series       = {{Applied Physics Letters}},
  title        = {{Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point}},
  url          = {{https://lup.lub.lu.se/search/files/2209074/2968586.pdf}},
  doi          = {{10.1063/1.4729929}},
  volume       = {{100}},
  year         = {{2012}},
}