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Nanowire resonant tunneling diodes

Björk, Mikael LU ; Ohlsson, Jonas LU ; Thelander, Claes LU ; Persson, Ann LU ; Deppert, Knut LU ; Wallenberg, Reine LU and Samuelson, Lars LU (2002) In Applied Physics Letters 81(23). p.4458-4460
Abstract
Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
81
issue
23
pages
4458 - 4460
publisher
American Institute of Physics
external identifiers
  • wos:000179481900049
  • scopus:0037011472
ISSN
0003-6951
DOI
10.1063/1.1527995
language
English
LU publication?
yes
id
c8867338-f5bd-42eb-8c10-fbb97b33bc6f (old id 322904)
date added to LUP
2007-08-10 09:49:32
date last changed
2017-12-10 03:49:06
@article{c8867338-f5bd-42eb-8c10-fbb97b33bc6f,
  abstract     = {Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.},
  author       = {Björk, Mikael and Ohlsson, Jonas and Thelander, Claes and Persson, Ann and Deppert, Knut and Wallenberg, Reine and Samuelson, Lars},
  issn         = {0003-6951},
  language     = {eng},
  number       = {23},
  pages        = {4458--4460},
  publisher    = {American Institute of Physics},
  series       = {Applied Physics Letters},
  title        = {Nanowire resonant tunneling diodes},
  url          = {http://dx.doi.org/10.1063/1.1527995},
  volume       = {81},
  year         = {2002},
}