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Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide

Lee, SK; Zetterling, CM; Ostling, M; Aberg, I; Magnusson, Martin LU ; Deppert, Knut LU ; Wernersson, Lars-Erik LU ; Samuelson, Lars LU and Litwin, A (2002) In Materials Science Forum 389-3(2). p.937-940
Abstract
We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts... (More)
We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts on highly doped nand p-type SiC material to study ohmic contacts using linear TLM measurements. (Less)
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author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
Schottky, ohmic contacts, nanoparticles, aerosol, SiC, contacts, image force lowering
in
Materials Science Forum
volume
389-3
issue
2
pages
937 - 940
publisher
Trans Tech Publications Ltd
external identifiers
  • wos:000177321100226
  • scopus:0036432228
ISSN
0255-5476
language
English
LU publication?
yes
id
04bb54d4-3191-413e-ae51-8019bd27b254 (old id 331230)
date added to LUP
2007-10-31 10:36:12
date last changed
2017-01-01 07:08:41
@article{04bb54d4-3191-413e-ae51-8019bd27b254,
  abstract     = {We have investigated the electrical characteristics of Ti Schottky contacts with embedded Au nano-particles on various types of epilayers of SiC (4H- and 6H-SiC). From our current-voltage (I-V) and capacitance-voltage (C-V) measurements, we observed that Ti Schottky contacts with embedded Au nano-particles had 0.19 eV (n-4H-SiC) and 0.15 eV (n-6H-SiC) lower barrier height than those of particle free Ti Schottky contacts. In order to understand this reduction of the Schottky barrier height (SBH) for Ti Schottky contacts with embedded Au nano-particles, it has been proposed that SBH lowering is caused by an enhanced electric field due to the small size of the Au nano-particles and the large SBH difference. We have also tested these contacts on highly doped nand p-type SiC material to study ohmic contacts using linear TLM measurements.},
  author       = {Lee, SK and Zetterling, CM and Ostling, M and Aberg, I and Magnusson, Martin and Deppert, Knut and Wernersson, Lars-Erik and Samuelson, Lars and Litwin, A},
  issn         = {0255-5476},
  keyword      = {Schottky,ohmic contacts,nanoparticles,aerosol,SiC,contacts,image force lowering},
  language     = {eng},
  number       = {2},
  pages        = {937--940},
  publisher    = {Trans Tech Publications Ltd},
  series       = {Materials Science Forum},
  title        = {Reduction of the barrier height and enhancement of tunneling current of titanium contacts using embedded Au nano-particles on 4H and 6H silicon carbide},
  volume       = {389-3},
  year         = {2002},
}