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Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays

Colvin, Jovana LU ; Ciechonski, Rafal ; Lenrick, Filip LU orcid ; Hultin, Olof LU ; Khalilian, Maryam LU ; Mikkelsen, Anders LU ; Gustafsson, Anders LU orcid ; Samuelson, Lars LU ; Timm, Rainer LU orcid and Ohlsson, Jonas LU (2019) In Physical Review Materials 3(9).
Please use this url to cite or link to this publication:
author
; ; ; ; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Physical Review Materials
volume
3
issue
9
publisher
American Physical Society
external identifiers
  • scopus:85072959448
ISSN
2475-9953
DOI
10.1103/PhysRevMaterials.3.093604
language
English
LU publication?
yes
id
3c188f4a-e100-48a9-96d8-22874dfe7fb0
date added to LUP
2019-10-15 09:27:26
date last changed
2024-01-31 09:40:16
@article{3c188f4a-e100-48a9-96d8-22874dfe7fb0,
  author       = {{Colvin, Jovana and Ciechonski, Rafal and Lenrick, Filip and Hultin, Olof and Khalilian, Maryam and Mikkelsen, Anders and Gustafsson, Anders and Samuelson, Lars and Timm, Rainer and Ohlsson, Jonas}},
  issn         = {{2475-9953}},
  language     = {{eng}},
  month        = {{09}},
  number       = {{9}},
  publisher    = {{American Physical Society}},
  series       = {{Physical Review Materials}},
  title        = {{Surface and dislocation investigation of planar GaN formed by crystal reformation of nanowire arrays}},
  url          = {{http://dx.doi.org/10.1103/PhysRevMaterials.3.093604}},
  doi          = {{10.1103/PhysRevMaterials.3.093604}},
  volume       = {{3}},
  year         = {{2019}},
}