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Exposure parameters for MeV proton beam writing on SU-8

Auzelyte, Vaida LU ; Elfman, Mikael LU ; Kristiansson, Per LU ; Nilsson, Christer LU ; Pallon, Jan LU ; Arteaga, Natalia LU and Wegdén, Marie LU (2006) In Microelectronic Engineering 83(10). p.2015-2020
Abstract
Proton beam writing was performed on a lithographic resist to determine the main parameters required to achieve the minimum feature size, maximum pattern lateral density and maximum aspect ratio. A 2.5 MeV proton beam focused to sizes between 1.5 and 2.5 mu m was used to expose SU-8 negative resist. The number of protons per pixel was varied in the exposure of SU-8 with thicknesses between 5 and 95 pm. Patterns consisting of single pixels, single-pixel lines and multi-pixel areas with different densities were fabricated. The smallest structures achieved were posts 1.5 pin in diameter with 4:1 structure-space ratio in 15 pm thick resist and the highest aspect ratio structures of 20:1 in 40 pm resist were produced. It was found that the... (More)
Proton beam writing was performed on a lithographic resist to determine the main parameters required to achieve the minimum feature size, maximum pattern lateral density and maximum aspect ratio. A 2.5 MeV proton beam focused to sizes between 1.5 and 2.5 mu m was used to expose SU-8 negative resist. The number of protons per pixel was varied in the exposure of SU-8 with thicknesses between 5 and 95 pm. Patterns consisting of single pixels, single-pixel lines and multi-pixel areas with different densities were fabricated. The smallest structures achieved were posts 1.5 pin in diameter with 4:1 structure-space ratio in 15 pm thick resist and the highest aspect ratio structures of 20:1 in 40 pm resist were produced. It was found that the minimum feature size depended only on the beam size, and +/- 10% post size accuracy could be achieved within 40-70% variation of the number of protons. MeV proton beam allows a direct fabrication of complex shapes without a mask in single-step irradiation and. in addition, no proximity correction is needed. We present examples of MeV proton beam written single and multi-pixel microstructures with easily reproducible high aspect ratios and densities. (c) 2006 Elsevier B.V. All rights reserved. (Less)
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author
; ; ; ; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
lithography, microfabrication, exposure latitude, proton beam writing, pattern density, aspect ratio
in
Microelectronic Engineering
volume
83
issue
10
pages
2015 - 2020
publisher
Elsevier
external identifiers
  • wos:000238919300020
  • scopus:33745150043
ISSN
1873-5568
DOI
10.1016/j.mee.2006.04.001
language
English
LU publication?
yes
additional info
The information about affiliations in this record was updated in December 2015. The record was previously connected to the following departments: Nuclear Physics (Faculty of Technology) (011013007)
id
554e7862-8be9-4e63-8a37-55dc14d02342 (old id 403934)
date added to LUP
2016-04-01 12:36:34
date last changed
2021-04-13 02:42:27
@article{554e7862-8be9-4e63-8a37-55dc14d02342,
  abstract     = {Proton beam writing was performed on a lithographic resist to determine the main parameters required to achieve the minimum feature size, maximum pattern lateral density and maximum aspect ratio. A 2.5 MeV proton beam focused to sizes between 1.5 and 2.5 mu m was used to expose SU-8 negative resist. The number of protons per pixel was varied in the exposure of SU-8 with thicknesses between 5 and 95 pm. Patterns consisting of single pixels, single-pixel lines and multi-pixel areas with different densities were fabricated. The smallest structures achieved were posts 1.5 pin in diameter with 4:1 structure-space ratio in 15 pm thick resist and the highest aspect ratio structures of 20:1 in 40 pm resist were produced. It was found that the minimum feature size depended only on the beam size, and +/- 10% post size accuracy could be achieved within 40-70% variation of the number of protons. MeV proton beam allows a direct fabrication of complex shapes without a mask in single-step irradiation and. in addition, no proximity correction is needed. We present examples of MeV proton beam written single and multi-pixel microstructures with easily reproducible high aspect ratios and densities. (c) 2006 Elsevier B.V. All rights reserved.},
  author       = {Auzelyte, Vaida and Elfman, Mikael and Kristiansson, Per and Nilsson, Christer and Pallon, Jan and Arteaga, Natalia and Wegdén, Marie},
  issn         = {1873-5568},
  language     = {eng},
  number       = {10},
  pages        = {2015--2020},
  publisher    = {Elsevier},
  series       = {Microelectronic Engineering},
  title        = {Exposure parameters for MeV proton beam writing on SU-8},
  url          = {http://dx.doi.org/10.1016/j.mee.2006.04.001},
  doi          = {10.1016/j.mee.2006.04.001},
  volume       = {83},
  year         = {2006},
}