Advanced

In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels

Zota, Cezar LU ; Wernersson, Lars-Erik LU and Lind, Erik LU (2014) In IEEE Electron Device Letters 35(3). p.342-344
Abstract
We report on In0.53Ga0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at V-DS = 0.05 V and L-G = 200 nm. At V-DS = 0.5 V, (gm), (max) = 1.67 mS/mu m is achieved (L-G = 32 nm). The extrapolated cutoff frequency f(T) of 210 GHz and the maximum oscillation frequency f(max) of 250 GHz are the highest of any reported III-V multiple-gate MOSFET.
Please use this url to cite or link to this publication:
author
organization
publishing date
type
Contribution to journal
publication status
published
subject
keywords
FinFET, InGaAs, MOSFET, selective regrowth, MuGFET, III-V, trigate
in
IEEE Electron Device Letters
volume
35
issue
3
pages
342 - 344
publisher
IEEE--Institute of Electrical and Electronics Engineers Inc.
external identifiers
  • wos:000332029200017
  • scopus:84896779649
ISSN
0741-3106
DOI
10.1109/LED.2014.2301843
language
English
LU publication?
yes
id
bfc380f0-6f71-42d5-b3f3-ece9cfb789fc (old id 4363681)
date added to LUP
2014-04-22 15:32:07
date last changed
2017-10-01 04:13:18
@article{bfc380f0-6f71-42d5-b3f3-ece9cfb789fc,
  abstract     = {We report on In0.53Ga0.47As n-channel multiple-gate field-effect transistors (MuGFETs or FinFETs) with a novel method of selectively regrown lateral (parallel to substrate) nanowires as channels. The device exhibits a minimum subthreshold slope of 85 mV/decade and drain-induced barrier lowering of 88 mV/V at V-DS = 0.05 V and L-G = 200 nm. At V-DS = 0.5 V, (gm), (max) = 1.67 mS/mu m is achieved (L-G = 32 nm). The extrapolated cutoff frequency f(T) of 210 GHz and the maximum oscillation frequency f(max) of 250 GHz are the highest of any reported III-V multiple-gate MOSFET.},
  author       = {Zota, Cezar and Wernersson, Lars-Erik and Lind, Erik},
  issn         = {0741-3106},
  keyword      = {FinFET,InGaAs,MOSFET,selective regrowth,MuGFET,III-V,trigate},
  language     = {eng},
  number       = {3},
  pages        = {342--344},
  publisher    = {IEEE--Institute of Electrical and Electronics Engineers Inc.},
  series       = {IEEE Electron Device Letters},
  title        = {In0.53Ga0.47As Multiple-Gate Field-Effect Transistors With Selectively Regrown Channels},
  url          = {http://dx.doi.org/10.1109/LED.2014.2301843},
  volume       = {35},
  year         = {2014},
}