Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors
(2014) In Applied Physics Letters 105(3).- Abstract
- Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.
Please use this url to cite or link to this publication:
https://lup.lub.lu.se/record/4725977
- author
- Mo, Jiongjiong
LU
; Lind, Erik
LU
; Roll, Guntrade LU and Wernersson, Lars-Erik LU
- organization
- publishing date
- 2014
- type
- Contribution to journal
- publication status
- published
- subject
- in
- Applied Physics Letters
- volume
- 105
- issue
- 3
- article number
- 033516
- publisher
- American Institute of Physics (AIP)
- external identifiers
-
- wos:000341152300097
- scopus:84921741935
- ISSN
- 0003-6951
- DOI
- 10.1063/1.4891569
- language
- English
- LU publication?
- yes
- id
- de08da77-89c1-4036-ba72-bcf87b9336c4 (old id 4725977)
- date added to LUP
- 2016-04-01 09:52:44
- date last changed
- 2024-03-23 20:12:45
@article{de08da77-89c1-4036-ba72-bcf87b9336c4, abstract = {{Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.}}, author = {{Mo, Jiongjiong and Lind, Erik and Roll, Guntrade and Wernersson, Lars-Erik}}, issn = {{0003-6951}}, language = {{eng}}, number = {{3}}, publisher = {{American Institute of Physics (AIP)}}, series = {{Applied Physics Letters}}, title = {{Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors}}, url = {{http://dx.doi.org/10.1063/1.4891569}}, doi = {{10.1063/1.4891569}}, volume = {{105}}, year = {{2014}}, }