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Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Mo, Jiongjiong LU ; Lind, Erik LU ; Roll, Guntrade LU and Wernersson, Lars-Erik LU (2014) In Applied Physics Letters 105(3).
Abstract
Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.
Please use this url to cite or link to this publication:
author
; ; and
organization
publishing date
type
Contribution to journal
publication status
published
subject
in
Applied Physics Letters
volume
105
issue
3
article number
033516
publisher
American Institute of Physics (AIP)
external identifiers
  • wos:000341152300097
  • scopus:84921741935
ISSN
0003-6951
DOI
10.1063/1.4891569
language
English
LU publication?
yes
id
de08da77-89c1-4036-ba72-bcf87b9336c4 (old id 4725977)
date added to LUP
2016-04-01 09:52:44
date last changed
2021-09-15 04:55:40
@article{de08da77-89c1-4036-ba72-bcf87b9336c4,
  abstract     = {Off-state drain leakage current has been investigated for InGaAs-based metal-oxide-semiconductor field-effect transistors with different drain configurations, InGaAs, and InP, respectively. The introduction of an InP drain presents a lower leakage current compared to InGaAs drain devices. From temperature dependent measurements, the leakage current mechanisms have been differentiated, and the role of drain direct band-to-band tunneling, as well as gate-induced drain leakage, has been identified. (C) 2014 AIP Publishing LLC.},
  author       = {Mo, Jiongjiong and Lind, Erik and Roll, Guntrade and Wernersson, Lars-Erik},
  issn         = {0003-6951},
  language     = {eng},
  number       = {3},
  publisher    = {American Institute of Physics (AIP)},
  series       = {Applied Physics Letters},
  title        = {Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors},
  url          = {http://dx.doi.org/10.1063/1.4891569},
  doi          = {10.1063/1.4891569},
  volume       = {105},
  year         = {2014},
}